One- and two-dimensional dopant/carrier profiling for ULSI

Vandervorst, Wilfried; Clarysse, Trudo; Wolf, Peter; Trenkler, Thomas; Hantschel, Thomas; Stephenson, R. J.; Janssens, Tom

doi:10.1063/1.56849

Cited by 5 publications

(3 citation statements)

References 26 publications

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“…The samples are probably not sufficiently activated, in which case the presented theory fails. The last result to be reported is that the C + Ge+ B implanted samples exhibit a purely thermal signal ͑too many remaining defects 24 ͒ ͑similar behavior is also observed in Ref. 25͒.…”

Section: Junction Depths Of Implanted Profilessupporting

confidence: 63%

Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves

Bogdanowicz

Dortu

Clarysse

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The ITRS Roadmap highlights the electrical characterization of the source and drain extension regions as a key challenge for future complimentary-metal-oxide-semiconductor technology. Presently, an accurate determination of the depth of ultrashallow junctions can routinely only be performed by time-consuming and destructive techniques such as secondary ion mass spectrometry ͑SIMS͒. In this work, the authors propose to use the fast and nondestructive photomodulated optical reflectance ͑PMOR͒ technique , as implemented in the Therma-Probe ® ͑TP͒ dopant metrology system, for these purposes. PMOR is a pump-probe technique based on the measurement of the pump-induced modulated change in probe reflectance, i.e., the so-called ͑photo͒ modulated reflectance. In this article, the authors demonstrate that the absolute junction depths of boxlike active dopant structures can be extracted in a very simple and straightforward way from the TP offset curves, which represent the behavior of the modulated reflectance as a function of the pump-probe beam spacing. Although the procedure is based on the insights into the physical behavior of the offset curves, no modeling is involved in the actual extraction process itself. The extracted junction depths are in good correlation with the corresponding junction depths as measured by means of SIMS. The technique has a subnanometer depth sensitivity for depths ranging from 10 to 35 nm with the present Therma-Probe ® 630XP system. The extension of the proposed procedure to the general ultrashallow profiles is also explored and discussed.

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Section: Junction Depths Of Implanted Profilessupporting

confidence: 63%

Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves

Bogdanowicz

Dortu

Clarysse

et al. 2010

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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“…Furthermore, failure analysis on structures under investigation and the calibration of process and device simulators becomes an important issue and also requires tools which enables one to carry out carrier profiling on a nanometer scale. 2 Atomic force microscopy (AFM) fulfills the requirements in terms of resolution. Therefore, a substantial effort has been made in the last few years to develop AFM-based carrier profiling tools.…”

Section: Introductionmentioning

confidence: 99%

“…A detailed description and a comparison of the three methods is given in Ref. 3. Although the working principles of these methods differ from each other, the crucial part in all three techniques is a small, electrically conductive tip which is fixed to a cantilever.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and use of metal tip and tip-on-tip probes for AFM-based device analysis

et al. 1998

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Different techniques based on the atomic force microscope (AFM) have been developed in the last few years for the electrical characterization of semiconductor devices. The quality of these measurements strongly depends on the tip which should not only have a small radius of curvature but also a high electrical conductivity. Therefore, the choice of metal as tip material is obvious. We have developed a process scheme for the fabrication of pyramidal metal tips which are integrated into a silicon cantilever. This paper discusses this process in detail and shows how the transition was made from prototyping to batch fabrication using standard 150 mm silicon wafer technology. Results are presented concerning the application of such probes for two-dimensional carrier profiling of InP and silicon structures using scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). A novel tip configuration called tip-on-tip has also been developed. This concept looks promising for future applications. We demonstrate how such a tip-on-tip configuration can be realized.

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Capacitive Probe Microscopy

Kopanski

2002

Encyclopedia of Imaging Science and Technology

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A scanning capacitance microscope (SCM) combines a differential capacitance measurement with an atomic force microscope (AFM). The AFM controls the position and contact force of a scanning probe tip, and a sensor simultaneously measures the capacitance between that tip and the sample under test. The capacitance sensor can detect very small (≈10 −21 F) changes in capacitance. The sensor is electrically connected to an AFM cantilevered tip that has been coated with metal to make it electrically conductive. As the SCM/AFM tip is scanned across the sample surface, simultaneous images of topography and differential capacitance are obtained. Currently, the most common application of SCM is imaging the carrier concentration variations (also known as dopant profiles) qualitatively within transistors that are part of silicon integrated circuits (ICs). Another application that has encouraged the development of commercial SCMs is the need for quantitative two‐dimensional (2‐D) carrier profiling of silicon transistors. This article reviews the history, operating principles, and applications of SCM. Special emphasis is placed on measuring quantitative 2‐D carrier profiles in silicon using SCM. This article also reviews implementation and applications of the scanning capacitance spectroscopy (SCS) technique, the intermittent contact mode of SCM (or IC‐SCM), and two other techniques that can also be classified as scanning capacitance probes: the scanning Kelvin probe microscope (SKPM), when operated at twice its drive frequency, and the scanning microwave microscope (SMWM).

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One- and two-dimensional dopant/carrier profiling for ULSI

Cited by 5 publications

References 26 publications

Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves

Nondestructive extraction of junction depths of active doping profiles from photomodulated optical reflectance offset curves

Fabrication and use of metal tip and tip-on-tip probes for AFM-based device analysis

Capacitive Probe Microscopy

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