One-dimensional chain structures produced by Ce on Si(111)

Hg, Lee; Lee, Daeyoup; Kim, Sehun; Hwang, Chanyong

doi:10.1016/j.susc.2005.09.001

Cited by 9 publications

(4 citation statements)

References 19 publications

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“…In the first one, cerium was deposited onto the preliminarily formed Si(111)1 × 1-Pb surface with a 1 ML Pb coverage (1 monolayer (ML) = 7.8 × 10 14 cm −2 ) at room temperature (RT) followed by short annealing at about 400 °C. In the second procedure, Pb deposition onto the Ce-induced quasi-one-dimensional reconstructions on Si(111) (in particular, 5 × 2-Ce with 1/5 ML coverage and 3 × 2-Ce with 1/3 ML coverage 34–36 ) was employed. Except for the increase of surface roughening in the second case due to Si mass transport (Ce/Si(111) reconstructions have extra Si atoms in the form of Seiwatz and honeycomb chains 36 ), we observed no difference in the final (Pb, Ce)/Si(111) surface.…”

Section: Resultsmentioning

confidence: 99%

“…Deposition rates were calibrated using STM observations of well-defined surface reconstructions with various coverages in the Pb/Si(111) system 24,26 and quasi-one-dimensional nanowire surface reconstructions in the Ce/Si(111) system. [33][34][35][36][37][38][39] STM images were acquired using Omicron variable-temperature STM-XA operating in a constant-current mode. Mechanically cut PtIr tips were used as STM probes after annealing in a vacuum.…”

Section: Experimental and Calculation Detailsmentioning

confidence: 99%

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A 2D heavy fermion CePb₃ kagome material on silicon: emergence of unique spin polarized states for spintronics

et al. 2022

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Section: Resultsmentioning

confidence: 99%

Section: Experimental and Calculation Detailsmentioning

confidence: 99%

A 2D heavy fermion CePb₃ kagome material on silicon: emergence of unique spin polarized states for spintronics

et al. 2022

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“…Different parallel CeSi x NW arrays were produced by depositing high-purity (99.95%) Ce metals with coverages ranging from 1 to 9 ML (1 ML = 9.59 × 10 14 atoms/cm 2 ) onto a single-domain Si(110)-16 × 2 surface at 675 K with a deposition rate of 0.15 ML/min and subsequently annealed at 875 K for 20 min. The growth temperature cannot be higher than 675 K; otherwise, a large amount of Ce clusters will be formed [ 20 , 21 ]. Ce metals were evaporated from an electron-beam evaporator with an internal flux meter; their deposition coverage was determined in situ by a quartz crystal thickness monitor with an accuracy of 20%.…”

Section: Methodsmentioning

confidence: 99%

Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

2013

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The perfectly ordered parallel arrays of periodic Ce silicide nanowires can self-organize with atomic precision on single-domain Si(110)-16 × 2 surfaces. The growth evolution of self-ordered parallel Ce silicide nanowire arrays is investigated over a broad range of Ce coverages on single-domain Si(110)-16 × 2 surfaces by scanning tunneling microscopy (STM). Three different types of well-ordered parallel arrays, consisting of uniformly spaced and atomically identical Ce silicide nanowires, are self-organized through the heteroepitaxial growth of Ce silicides on a long-range grating-like 16 × 2 reconstruction at the deposition of various Ce coverages. Each atomically precise Ce silicide nanowire consists of a bundle of chains and rows with different atomic structures. The atomic-resolution dual-polarity STM images reveal that the interchain coupling leads to the formation of the registry-aligned chain bundles within individual Ce silicide nanowire. The nanowire width and the interchain coupling can be adjusted systematically by varying the Ce coverage on a Si(110) surface. This natural template-directed self-organization of perfectly regular parallel nanowire arrays allows for the precise control of the feature size and positions within ±0.2 nm over a large area. Thus, it is a promising route to produce parallel nanowire arrays in a straightforward, low-cost, high-throughput process.

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“…Since a high-oxygen-concentration region was observed at the surface of the Si:Ce film by SIMS measurement, the existence of the valence state, of Ce 4þ in the Si:Ce film is attributed to the formation of Ce 4þ -O bonding [22][23][24]. The peak at around 887.0 eV (solid line) corresponds to a state of dissolved Ce in a Si crystal (solid line),[25][26][27] which is apparently different from the spectrum of stable silicide reported in refs 25. and 26, which should be observed at 884.4 eV.…”

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confidence: 99%

Magnetic Properties of Uniformly Ce-Doped Si Thin Films with n-Type Conduction

Terao

Fujii

Shindo

et al. 2009

jjap

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Magnetic properties and the chemical bonding state of Ce for a diluted magnetic semiconductor (DMS), n-type Si:Ce thin films with a Ce concentration below 8.0 at. % grown by low-temperature molecular beam epitaxy (LT-MBE) are investigated. LT growth enables the films to have a uniform distribution of Ce in epitaxial Si films with a Ce concentration up to 8.0 at. %. The precipitation of the second phase, such as cerium silicide, is not recognized in the film with a Ce concentration of 4.0 at. % by electron diffraction using transmission electron microscopy (TEM) analysis. All the films exhibit n-type conduction. The electron density increases with increasing Ce concentration up to 0.07 at. % because of the generation of electrons by point defects. Then, the density decreases with increasing Ce concentration up to 1.1 at. % because of the compensation by the hole generated by substitutionally dissolved Ce 3þ . A positive magnetization due to a Ce 3þ ion is observed in all the films. Unlike p-type Si:Ce, however, ferromagnetic or super-paramagnetic behavior is not observed in uniformly Cedoped Si films with n-type conduction, suggesting that the hole plays an important role in the anomaly observed in magnetotransport behaviors in Ce-doped Si films.

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One-dimensional chain structures produced by Ce on Si(111)

Cited by 9 publications

References 19 publications

A 2D heavy fermion CePb₃ kagome material on silicon: emergence of unique spin polarized states for spintronics

A 2D heavy fermion CePb₃ kagome material on silicon: emergence of unique spin polarized states for spintronics

Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

Magnetic Properties of Uniformly Ce-Doped Si Thin Films with n-Type Conduction

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One-dimensional chain structures produced by Ce on Si(111)

Cited by 9 publications

References 19 publications

A 2D heavy fermion CePb3 kagome material on silicon: emergence of unique spin polarized states for spintronics

A 2D heavy fermion CePb3 kagome material on silicon: emergence of unique spin polarized states for spintronics

Template-directed atomically precise self-organization of perfectly ordered parallel cerium silicide nanowire arrays on Si(110)-16 × 2 surfaces

Magnetic Properties of Uniformly Ce-Doped Si Thin Films with n-Type Conduction

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A 2D heavy fermion CePb₃ kagome material on silicon: emergence of unique spin polarized states for spintronics

A 2D heavy fermion CePb₃ kagome material on silicon: emergence of unique spin polarized states for spintronics