“…The results show that the valence band maximum (VBM) is at Γ and the conduction band minimum (CBM) is along the C-Γ direction, which indicate that Sr/Si(111)-3×2 surface is an indirect band-gap semiconductor with a band gap of 1.44 eV. Like Sr, Ca and Ba adatoms induced Si(111)-3×2 surfaces also present the semiconductive character with a 1.41 and 1.42 eV band gaps, respectively, and the difference is the CBM for Ca/Si(111)-3×2 surface is at C. However, recently a band gap of 1.7 eV for Sr/Si(111)-3×2 surface, reported by Du et al [39], was observed using scanning tunneling microscopy and scanning tunneling spectroscopy, which is larger than the band gap shown above. This phenomenon is, moreover, supported by the previous experimental findings [16,34,36,37,[57][58][59][60][61][62][63].…”