One-dimensional plasmons in AlGaAs/GaAs quantum wires

Demel, T.; Heitmann, D.; Grambow, P.

doi:10.1103/physrevlett.66.2657

Cited by 158 publications

(55 citation statements)

References 25 publications

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“…This would then shift all the ω c -related resistivity oscillations and would completely destroy any seeming agreement with experiments (the depolarization shift is not negligible under the real experimental conditions, see a detailed comparison in Table I of Ref. 70 ; to the contrary, it is very large and has been many times observed both in the absorption [71][72][73] experiments). Moreover, one should not ignore that (already mentioned) fact that about ten years before the first MIZRS experiment by Mani et al…”

Section: (B)mentioning

confidence: 96%

Theory of microwave-induced zero-resistance states in two-dimensional electron systems

Mikhaǐlov

2011

Phys. Rev. B

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The phenomena of the microwave induced zero resistance states (MIZRS) and the microwave induced resistance oscillations (MIRO) were discovered in the ultraclean two-dimensional electron systems in 2001 -2003 and have attracted great interest of researchers. In spite of numerous theoretical efforts the true origin of these effects remains unknown so far. We show that the MIRO/ZRS phenomena are naturally explained by the influence of the ponderomotive forces which arise in the near-contact regions of the two-dimensional electron gas under the action of microwaves. The proposed analytical theory is in agreement with all experimental facts accumulated so far and provides a simple and self-evident explanation of the microwave frequency, polarization, magnetic field, mobility, power and temperature dependencies of the observed effects.

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Section: (B)mentioning

confidence: 96%

Theory of microwave-induced zero-resistance states in two-dimensional electron systems

Mikhaǐlov

2011

Phys. Rev. B

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“…4,5,6,7,8,9,10,11 ). Far-infrared transmission, as well as Raman spectroscopy experiments quantitatively confirmed theoretically predicted 12,13 plasmon and magnetoplasmon spectra, both in two-dimensional (2D) electron layers, and in systems with lower dimensionality (wires and dots).…”

Section: Introductionmentioning

confidence: 99%

Microwave response of a two-dimensional electron stripe

Mikhaǐlov

Savostianova

2005

Phys. Rev. B

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Electromagnetic response of a finite-width two-dimensional electron stripe is theoretically studied. It is shown that retardation and radiative effects substantially modify the absorption spectrum of the system at microwave frequencies, leading to a non-trivial zigzag behavior of the magnetoplasmonpolariton modes in magnetic fields, similar to that recently observed by Kukushkin et al. [Phys. Rev. Lett. 90, 156801 (2003)].

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“…The plasmon modes appear because of the localization of carriers in the potential relief created by the geometric boundaries of the elements of nanostructures, surface states, and donor/acceptor ions. The displacement of carriers from the equilibrium position is accompanied by the appearance of a restoring force whose characteristic value corresponds to the presence of plasmon excitations in the terahertz frequency region [7,24,27,34]. In order to reveal the microscopic mechanism of the observed absorption, we are going to perform further investigations of heterostructures with various geometric and physical parameters, as well as in a wider frequency interval (including the infrared range) and at various temperatures.…”

Section: Doi: 101134/s0021364010240033mentioning

confidence: 99%

Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots

et al. 2010

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The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed. DOI: 10.1134/S0021364010240033Artificial low-dimensional nanoobjects-quantum wells, quantum wires, and quantum dots-as well as structures based on them, are promising systems for improvement of existing devices and development of fundamentally new devices of micro and optoelectronics [1]. In addition to the necessity of the development of new technological processes and equipment for manufacturing nanostructures with required parameters, the investigation of the fundamental properties of such structures is also of primary importance. Size quantization of the energy of charge carriers whose spatial motion is limited at scales of about 100 nm or smaller is one of the most striking such properties. In particular, a quantum dot is a zero dimensional object can be considered as an artificial atom with one or more charge carriers (electrons or holes) having a discrete energy spectrum [2]. Arrays of a large number of quantum dots including multilayer heterostructures make it possible to form artificial "solids" whose properties can be controllably changed by varying the characteristics of constituent elements ("atoms") and the environment (semiconductor matrix). Such systems can have a very rich set of physical properties, which are caused by single-particle and collective interactions and depend on the number and mobility of carriers in quantum dots, Coulomb interaction between the carriers inside a quantum dot and in neighboring quantum dots, charge coupling between neighboring quantum dots, polaron and exciton effects, etc. These properties are actively studied during the last two decades. One of the main tools for such investigations is infrared spectroscopy, whose advantages are the contactless character of the measurements and the possibility of the direct observation of transitions between quantized energy states. The specificity of the infrared region is that almost all main interactions in low-dimensional nanostructures (distance between levels, Coulomb interaction between charges in quantum dots, one and multi-particle exciton and polaron effects, plasmon excitations) have the corresponding characteristic energies from several meV to 50-100 meV [3][4][5][6][7].It is worth noting that almost all performed infrared spectroscopy experiments were devoted to the measurement of the relative characteristics (e.g., relative tra...

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One-dimensional plasmons in AlGaAs/GaAs quantum wires

Cited by 158 publications

References 25 publications

Theory of microwave-induced zero-resistance states in two-dimensional electron systems

Theory of microwave-induced zero-resistance states in two-dimensional electron systems

Microwave response of a two-dimensional electron stripe

Absorption of terahertz radiation in Ge/Si(001) heterostructures with quantum dots

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