One-dimensional simulation study of microcrystalline silicon thin films for solar cell and thin film transistor applications using AMPS-1D

Tripathi, Suvagata; Venkataramani, N.; Dusane, Rajiv O.; Schroêder, B.

doi:10.1016/j.tsf.2005.07.199

Cited by 10 publications

(7 citation statements)

References 15 publications

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“…1(a)) [15]. In the present version of AMPS-1D there are two different approaches, (i) Density of States (DOS) picture and (ii) Carrier lifetime picture.…”

Section: Theorymentioning

confidence: 99%

“…In our previous work we have used AMPS-1D [13,14] to study electronic transport of lc-Si:H thin films by adopting grain-boundary trapping model and considering thermionic-emission over grain-boundary potential barrier (the tunneling process is not accounted by AMPS-1D) [15]. There we described two simple one-dimensional models of lc-Si:H thin films depending upon the conduction path for thin film transistor and solar cell applications.…”

Section: Introductionmentioning

confidence: 99%

“…(b) Schematic diagram of potential barriers at grain boundaries and thermionic emission process in n + -lc-Si:H thin films[15].…”

mentioning

confidence: 99%

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AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin films

Tripathi

Dusane

2006

Journal of Non-Crystalline Solids

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“…1(a)) [15]. In the present version of AMPS-1D there are two different approaches, (i) Density of States (DOS) picture and (ii) Carrier lifetime picture.…”

Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin films

Tripathi

Dusane

2006

Journal of Non-Crystalline Solids

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“…Many studies have mentioned these transport properties using different models and experimental results [3][4][5][6][7]. We refer to these articles to set up the model which is revealed in table 2.…”

Section: Amps Model For A-si:h and µC-si:hmentioning

confidence: 99%

Device modeling of a micromorph tandem solar cell using AMPS-1D

Huang

Hsu

Shieh

et al. 2010

2010 35th IEEE Photovoltaic Specialists Conference

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This work first theoretically optimize the amorphous (a-Si:H) and the microcrystalline (µc-Si:H) devices characteristics, and then perform studies for micromorph tandem solar cells. The studies calculated by AMPS-1D show that the TCO work function has obvious influence on the open-circuit voltage. Moreover, the power conversion efficiency of an a-Si:H cell is optimized by changing the absorber's layer thickness and mobility gap. Furthermore, a critical doping concentration of µc-Si:H films limiting the barrier height of a grain boundary (GB) is observed. After optimizing sub cell mutually, we combine the individual junctions to construct a micromorph cell which has an efficiency of 9.24%.

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“…1-7 Several theoretical models have been proposed to describe its transport properties, 5,8,9 but some issues are still under debate. One of them is the anomalous behavior ͓above room temperature ͑RT͔͒ of the activation energy E a and the conductivity prefactor 0 ͑as derived empirically from an Arrhenius plot of the electrical conductivity͒ as a function of the crystalline ratio X c .…”

Section: Introductionmentioning

confidence: 99%

The statistical shift of the chemical potential causing anomalous conductivity in hydrogenated microcrystalline silicon

Lof

Schropp

2010

Journal of Applied Physics

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The behavior of the electrical conductivity in hydrogenated microcrystalline silicon ͑c-Si: H͒ that is frequently observed is explained by considering the statistical shift in the chemical potential as a function of the crystalline fraction ͑X c ͒, the dangling bond density ͑N db ͒, and the doping density ͑N d ͒. Our model shows that temperature dependent dc conductivity measurements above room temperature can be very well explained by ͑unintentional͒ micro doping of c-Si: H. It is shown that the statistical shift in the chemical potential ͑͒ is influenced mostly by the ratio between N d and N db . It is concluded that the anomalous dependence of the apparent activation energy ͑E a ͒ and the apparent exponential prefactor ͑ 0 ͒ on X c can be explained by behavior of , that can be induced by a change in this ratio between N d and N db . We used an effective medium approximation for the electron density of states ͑DOS͒ of c-Si: H. The DOS is calculated as a weighted sum of the DOS of c-Si and the DOS of a-Si:H, parameterized by X c , N db , and N d . The conductivity is deduced assuming a single dominant conduction path above the conduction edge of a-Si:H.

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One-dimensional simulation study of microcrystalline silicon thin films for solar cell and thin film transistor applications using AMPS-1D

Cited by 10 publications

References 15 publications

AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin films

AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin films

Device modeling of a micromorph tandem solar cell using AMPS-1D

The statistical shift of the chemical potential causing anomalous conductivity in hydrogenated microcrystalline silicon

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