One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

Panda, Debashis; Tseng, Tseung‐Yuen

doi:10.1007/s10853-013-7541-0

Cited by 185 publications

(98 citation statements)

References 335 publications

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“…Multihierarchical electrode characterization SEM images of ZnONR ( Figure 1a) and ZnONR+gly films ( Figure S1) show that the rods have a hexagonal shape and their surface is very smooth which is consistent with described in the literature 9,[19][20][21][22][23] . The average diameters of the rods are 490 nm and 400 nm for the ZnONR and ZnONR+gly films, respectively.…”

Section: Resultssupporting

confidence: 86%

“…For this reason TiNTs have been used mostly as photocatalysts for water splitting in the powder form, as is shown in the upper part of Table 1. However, vertically aligned ZnO nanorod films can be easily obtained through several methods, such as hydrothermal synthesis, which is an inexpensive technique that requires low temperature, and the films can growth on several different surfaces without requiring metal catalysts 9,[19][20][21][22][23] . Thus, we propose the design of an electrode based on the TiNT and ZnONR materials on the nanascale, by developing a multiscale hierarchical electrode for efficient oxygen evolution via photoelectrochemical water splitting, which follows the [40][41][42] .…”

Section: Introductionmentioning

confidence: 99%

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Multihierarchical electrodes based on titanate nanotubes and zinc oxide nanorods for photoelectrochemical water splitting

et al. 2016

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a Studies involving water splitting to form hydrogen and oxygen have attracted attention because H2is considered the fuel of the future. Photoelectrocatalysts have been widely used for this application, and several metal oxides can be applied as catalysts. Among them, we highlight zinc oxide nanorods (ZnONRs) and titanate nanotubes (TiNTs); however, their individual nanostructures exhibit disadvantages. For example, ZnONR shows rapid recombination of the photogenerated charges, and TiNT gives rise to randomly orientated films; these disadvantages limit their application as photoanodes. In this study, for the first time, we present a new class of multihierarchical electrodes based on TiNT-decorated ZnONR films that exhibited superior results to the individual species. The TiNTs are homogenously dispersed over the surface of the rods without forming agglomerates, giving rise to a heterojunction that exhibits lower recombination rates. It was found that the results are better when the contents of TiNT in the electrode are higher; thus, glycine was successfully used as a bridge to link both of the structures, increasing the amount of TiNT decorating the rods. As a result, the photocurrent generated with these multihierarchical electrodes is higher than that obtained for pure ZnONR electrodes (0.9 mA and 0.45 mA, respectively), and the electrode potentials for O2 evolution is lower than that observed for pure TiNT electrodes (0 V and 0.8 V vs. ERHE, respectively). The IPCE values are also higher for the multihierarchical electrodes.

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Section: Resultssupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Multihierarchical electrodes based on titanate nanotubes and zinc oxide nanorods for photoelectrochemical water splitting

et al. 2016

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“…Among the several emerging memory, resistive random access memory (RRAM) based on the resistive switching (RS) effect taking place in metal-insulator-metal (MIM) cells, has attracted renowned interests as a promising next generation nonvolatile memory owing to its simple constituents, high speed operation, nondestructive readout, low operation voltage, long retention time, and high scalability. [1][2][3][4][5][6][7] Binary transition metal oxides, such as SiO 2 , HfO 2 , TiO 2 , NiO, ZnO, Ta 2 O 5 , etc., [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] has been intensively investigated as an active layers in RRAM application, for their big advantage, like crystal structure and stoichiometry are more easily controlled than perovskite oxides that consist of more than three components. Two-terminal RRAM structure allow its integration in crossbar arrays, by accessing each memory cell through the selection of a word-line and a bit-line.…”

Section: Introductionmentioning

confidence: 99%

Temperature induced complementary switching in titanium oxide resistive random access memory

2016

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On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

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“…Quasi-one-dimensional (1D) structures on the basis of zinc oxide are a promising material for nanoelectronics [3,4]. The array of nanorods has a high specific surface and crystalline quality with a high electron mobility along the nanorods.…”

Section: Introductionmentioning

confidence: 99%

“…When ZnO is doped with an acceptor, the compensation of donors takes place. The possibility of p-type doping strongly depends on the growth method, so for designing multilayer structures with n-and p-doped layers it is necessary to have a choice of the growth methods and to apply each of them aiming to reach the desired properties [3,4].…”

Section: Introductionmentioning

confidence: 99%

Homoepitaxial Nanostructures of Zinc Oxide

Plakhova

Баранов

Knotko

et al. 2015

Journal of Nanomaterials

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The homoepitaxial ZnO nanostructures (HENS) were obtained on different substrates using various techniques. The first type of homoepitaxial ZnO nanorod arrays was grown on Si or ITO substrates by using two alternative sequences: (a) seeding → growth from solution → growth from vapor and contrariwise (b) seeding → growth from vapor → growth from solution. As follows from transport and cathode luminescence measurements homoepitaxial growth allows enhancing electrical or luminescence properties. The second type of HENS was prepared by growth of vertically or horizontally oriented ZnO nanorod arrays depending on monocrystalline ZnO wafers with [0001] and [10-10] orientation. In all cases the growth occurs along the -axis of fast growth.

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One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

Cited by 185 publications

References 335 publications

Multihierarchical electrodes based on titanate nanotubes and zinc oxide nanorods for photoelectrochemical water splitting

Multihierarchical electrodes based on titanate nanotubes and zinc oxide nanorods for photoelectrochemical water splitting

Temperature induced complementary switching in titanium oxide resistive random access memory

Homoepitaxial Nanostructures of Zinc Oxide

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