2017
DOI: 10.1016/j.pnsc.2017.09.006
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One-pot hydrothermal synthesis and fabrication of kesterite Cu 2 ZnSn(S,Se) 4 thin films

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Cited by 22 publications
(10 citation statements)
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“…It was worthy of note that a low‐intensity band at 327 cm −1 corresponding S anion was only observed in the Raman spectra of the sample A2. This band was attributed to A1 mode symmetric vibrations of the CZTSSe phase 41‐43 . The presence of this low‐intensity band at 327 cm −1 in the Raman spectra of the sample A2 could be also considered as another indication of a very low amount of S content in the sample A2 44 …”
Section: Resultsmentioning
confidence: 94%
“…It was worthy of note that a low‐intensity band at 327 cm −1 corresponding S anion was only observed in the Raman spectra of the sample A2. This band was attributed to A1 mode symmetric vibrations of the CZTSSe phase 41‐43 . The presence of this low‐intensity band at 327 cm −1 in the Raman spectra of the sample A2 could be also considered as another indication of a very low amount of S content in the sample A2 44 …”
Section: Resultsmentioning
confidence: 94%
“…Origin of (PSC) starts from the device structure of DSSCs [11]. Two of the important properties of perovskite is its largely tunable bandgap ( i.e; PSC has a band-gap from 1.5 to 2.3 eV) [19]& high light captivation co-efficient which is larger than 10 4 cm -1 [20,21] that is comparable to other thin film PV constituent ingredientsi.e; materials of CZTS and CdTe [22,23]. Its suitable and low-cost fabrication techniques also play an important role as compared to Si-based fabrication that is costly and complex high vacuum deposition method.…”
Section: Keymentioning
confidence: 99%
“…The structure of PSCs also origins from the device structure of DSSCs [ 1 ]. The perovskite materials have been demonstrated with largely tunable band gap (e.g., CH 3 NH 3 PbX 3 has a band gap from 1.5 eV to 2.3 eV) [ 4 ] and great light absorption coefficient (higher than 10 4 cm −1 ) [ 5 , 6 ], which is similar to other thin film solar cell materials such as CdTe [ 7 ] and copper zinc tin sulfide (CZTS) [ 8 ]. Its low-cost and convenient fabrication techniques also serve as the possible advantages over silicon-based devices that require complicated and costly high-vacuum deposition methods.…”
Section: Introductionmentioning
confidence: 99%