Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102)
DOI: 10.1109/iitc.1998.704791
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One step effective planarization of shallow trench isolation

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“…This is a complicated process that depends on the relative removal rate of the oxide in the trenches and the nitride barrier in the raised area, which are both density dependent. There are currently no existing models for reverse tone etchback STI CMP, even though models for single-step STI CMP 5 and process control methods exist. 6 In this work, a mathematical model for reverse tone etchback STI CMP based on density and step height dependent oxide and nitride removal rates is presented.…”
mentioning
confidence: 99%
“…This is a complicated process that depends on the relative removal rate of the oxide in the trenches and the nitride barrier in the raised area, which are both density dependent. There are currently no existing models for reverse tone etchback STI CMP, even though models for single-step STI CMP 5 and process control methods exist. 6 In this work, a mathematical model for reverse tone etchback STI CMP based on density and step height dependent oxide and nitride removal rates is presented.…”
mentioning
confidence: 99%