One-step electrodeposited CuInSe2 thin films studied by Raman spectroscopy

Ramdani, O.; Guillemoles, Jean‐François; Lincot, Daniel; Grand, P.; Chassaing, E.; Kerrec, O.; Rzepka, E.

doi:10.1016/j.tsf.2007.02.109

Cited by 90 publications

(70 citation statements)

References 10 publications

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“…1 also show at higher wavenumbers, a peak centred at about 240 cm −1 that is even dominant for the thinnest sample, together with a smaller contribution at 260 cm −1 . The peak at about 240 cm −1 is attributed to the presence of trigonal elemental Se, [9,10] while the contribution at about 260 cm −1 is characteristic of Cu-Se compounds. [11,12] Observation of these secondary phases is consistent with the overall Se and Cu-rich composition of the layers.…”

Section: Resultsmentioning

confidence: 99%

Raman scattering characterisation of electrochemical growth of CuInSe₂ nanocrystalline thin films for photovoltaic applications: Surface and in‐depth analysis

Izquierdo-Roca

Álvarez-Garcı́a

Calvo‐Barrio

et al. 2008

Surface & Interface Analysis

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A detailed Raman scattering analysis of the electrodeposition process of nanocrystalline CuInSe 2 layers for solar cell devices is reported. The correlation of the Raman spectra measured after the growth of the layers with different times has allowed investigating the chemical phases involved in the film formation process and their resulting nanocrystalline structure. The experimental data indicate the presence of elemental Se and Cu-Se binary compounds as the main secondary phases in the layers, which are directly related to the Se and Cu excess conditions used in the electrodeposition growth. These data show the existence of a high content of elemental Se at the region close to the interface of the layer with the Mo-coated glass substrate, this being likely related to a lack of incorporation of In at the initial growth stages. Nanoscopic Cu-deficient domains are also revealed by the presence of a band at the low frequency side of the main CuInSe 2 peak.

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Section: Resultsmentioning

confidence: 99%

Raman scattering characterisation of electrochemical growth of CuInSe₂ nanocrystalline thin films for photovoltaic applications: Surface and in‐depth analysis

Izquierdo-Roca

Álvarez-Garcı́a

Calvo‐Barrio

et al. 2008

Surface & Interface Analysis

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“…The spectra present two peaks at 240 and 261 cm −1 . The peak at 240 cm −1 is attributed to the presence of trigonal elementary selenium ͑Se͒, 13 while the peak at 261 cm −1 is characteristic of Cu-Se compounds. The absence of intense low-frequency bands at 17 and 42 cm −1 characteristic of the covellite-type structure ͑CuSe͒, 14 and the analysis of the XRD spectra, points to a different binary, probably Cu 2 Se, though the coexistence of the covellite CuSe phase cannot be discarded.…”

Section: ͑1͒mentioning

confidence: 99%

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Izquierdo-Roca

Pérez-Rodrı́guez

Romano‐Rodríguez

et al. 2007

Journal of Applied Physics

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This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn͑S,Se͒ 2 absorbers produced by electrodeposition of nanocrystalline CuInSe 2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS 2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.

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“…In CIS thin-film production, in addition to the majority phase composed of CuInSe 2 , analysis of the electrodeposits reveals the presence of smaller quantities of two other phases: a Cu-Se phase and a phase of elemental Se [10,15].…”

Section: Introductionmentioning

confidence: 99%

Copper–nickel codeposition as a model for mass-transfer characterization in copper–indium–selenium thin-film production

et al. 2009

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The use of binary copper-nickel (Cu-Ni) codeposition from a complexing citrate electrolyte is proposed as a convenient model system for simple, rapid and inexpensive characterization of local mass-transfer limitations arising in the production of ternary copper-indiumselenium (CIS) thin films. Both the Cu-Ni and the CIS systems have been investigated in a small pilot cell and deposit thickness and composition distributions on a 5 9 5 cm 2 cathode have been compared. The experimental comparison confirms that the mass-transfer characteristics measured for copper deposition in the binary Cu-Ni codeposition system offer an excellent representation of the mass-transfer-limited deposition of copper and selenium in the ternary CIS system. The binary Cu-Ni system presents a number of advantages for process development, among which the possibility of operating at neutral pH and being much easier to handle, less expensive and less toxic than the CIS system. The results of the study presented here, although targeted to CIS production, may also be of use for the development of other electrodeposition processes in which one or more electro-active species are reduced under mass-transfer control.

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One-step electrodeposited CuInSe2 thin films studied by Raman spectroscopy

Cited by 90 publications

References 10 publications

Raman scattering characterisation of electrochemical growth of CuInSe₂ nanocrystalline thin films for photovoltaic applications: Surface and in‐depth analysis

Raman scattering characterisation of electrochemical growth of CuInSe₂ nanocrystalline thin films for photovoltaic applications: Surface and in‐depth analysis

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Copper–nickel codeposition as a model for mass-transfer characterization in copper–indium–selenium thin-film production

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One-step electrodeposited CuInSe2 thin films studied by Raman spectroscopy

Cited by 90 publications

References 10 publications

Raman scattering characterisation of electrochemical growth of CuInSe2 nanocrystalline thin films for photovoltaic applications: Surface and in‐depth analysis

Raman scattering characterisation of electrochemical growth of CuInSe2 nanocrystalline thin films for photovoltaic applications: Surface and in‐depth analysis

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Copper–nickel codeposition as a model for mass-transfer characterization in copper–indium–selenium thin-film production

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Raman scattering characterisation of electrochemical growth of CuInSe₂ nanocrystalline thin films for photovoltaic applications: Surface and in‐depth analysis

Raman scattering characterisation of electrochemical growth of CuInSe₂ nanocrystalline thin films for photovoltaic applications: Surface and in‐depth analysis