2020
DOI: 10.1016/j.apsusc.2020.145804
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One-step fabrication of 1D p-NiO nanowire/n-Si heterojunction: Development of self-powered ultraviolet photodetector

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Cited by 36 publications
(20 citation statements)
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“…Fig. 1 illustrates the one-step synthesis process of NiO NWs on a glass substrate, which was originally achieved in accordance with our previous work, 43 where the NiO NWs were deposited on n-Si wafers to form p-n heterojunctions. The precursor solution for the electrospinning process was obtained by dissolving 0.1 M PVA (polyvinyl alcohol, MW ¼ 125 000 Aldrich) in 10 mL deionized water, then stirred for 30 min at 60 C. Then, this was mixed with 0.25 M Ni(NO 3 ) 2 $6H 2 O as the NiO precursor.…”
Section: Nio Photocatalyst Preparationmentioning
confidence: 99%
“…Fig. 1 illustrates the one-step synthesis process of NiO NWs on a glass substrate, which was originally achieved in accordance with our previous work, 43 where the NiO NWs were deposited on n-Si wafers to form p-n heterojunctions. The precursor solution for the electrospinning process was obtained by dissolving 0.1 M PVA (polyvinyl alcohol, MW ¼ 125 000 Aldrich) in 10 mL deionized water, then stirred for 30 min at 60 C. Then, this was mixed with 0.25 M Ni(NO 3 ) 2 $6H 2 O as the NiO precursor.…”
Section: Nio Photocatalyst Preparationmentioning
confidence: 99%
“…As obtained, P-NiO/n-Si showed a photoelectric responsibility of 9.1 mA W −1 . [489] Pan and coworkers reported the synthesis of GaN electrospun nanofibers. Pan also compared the photoconductance of GaN nanowires and electrospun GaN nanofibers; GaN nanofiber showed 830 times higher photoconductance than GaN nanowire in the presence of UV light.…”
Section: Photoelectric Sensorsmentioning
confidence: 99%
“…Moreover, it maintained excellent sensitivity, stability and reproducibility with a rapid response time of 0.8 s. Using the electrospinning method, K.C.S. Reddy et al [169] created a self-powered NiO-p/Si-n based ultraviolet photodetector which exhibited a high responsivity of 9.1 mA W −1 at zero bias with a fast photoresponse of less than 0.4 s. X. Huang et al [102] observed that electrospun bead-like Co-ZnO nanostructures present ferromagnetic properties and an excellent electromagnetic loss performance-the effective microwave absorption of bandwidth with reflection loss less than −10 dB was 11.6 GHz.…”
Section: Electrospun Metal Oxides 1d Nanostructures In Other Applicationsmentioning
confidence: 99%