One-step fast deposition of thick epitaxial CdZnTe film on (001)GaAs by close-spaced sublimation

Effect of ZnTe transition layer to the performance of CdZnTe/GaN multilayer films for solar-blind photodetector applications

“…Photoresponse (R) is an important indicator of UV detectors. The R of samples can be calculated by the following formula: R = ∆I/PA (3) where ∆I is difference between the photo current and the dark current, P is power density of ultraviolet light (power densities of 254 nm and 400 nm are 0.0557 mW cm −2 and 1.0616 mW cm −2 , respectively), and A is the area of ultraviolet light irradiation between bulk electrodes. R 254 and R 400 of the M-5 sample at −1 V are 4.84 mA W −1 and 0.07 mA W −1 , and R 254 /R 400 equals 69.1, while R 254 /R 400 of the M-0 sample is 31.8.…”

“…CdZnTe is a ternary alloy compound with a direct band gap, which can be regarded as a continuous solid solution of CdTe and ZnTe [1]. Due to the large atomic number, high resistivity and high quantum efficiency [2], CdZnTe has become one of the excellent semiconductor materials for room temperature high-energy radiation detection [3].…”

“…Chander et al studied the effects of ITO, FTO and Si substrates on the growth of CdZnTe films, and found that the FTO, ITO and Si are cheap and have strong binding force with the epitaxial CdZnTe films [7], but they have poor radiation resistance and high temperature stability, which are not suitable for operating in the harsh environment of nuclear detection or ultraviolet detection [8]. Besides, some studies have found that the CdZnTe thick films were prepared on the GaAs substrates, early polycrystalline films developed into an epitaxial layer with time, and the polycrystalline films transformed into single crystal films by lateral excessive growth [3]. Recently, the response of CdZnTe films grown on GaN substrates to ultraviolet light in the solar-blind area has been studied [9].…”

(BixSb1−x)2Se3 thin films for short wavelength infrared region solar cells

“…In light of recent reports of high PCE Sb 2 Se 3 solar cells fabricated through CSS, 41 it is worth considering CSS as a potential route for depositing Bi-alloyed Sb 2 Se 3 thin films. Synthesis of various alloys with the CSS technique, such as Cd 1− x Zn x Te, 42,43 CuGaTe 2 , 44 Cd 1− x Zn x S, 45 and CdSe x Te 1− x 46 has been reported. In analogy with the above reports, and since Bi 2 Se 3 and Sb 2 Se 3 both have relatively high vapor pressures, 47,48 we posited that (Bi x Sb 1− x ) 2 Se 3 thin film can be deposited through CSS by a direct mixture of Bi 2 Se 3 and Sb 2 Se 3 powders.…”

Atomic-Resolution Structure Imaging of Misfit Dislocations at Heterovalent II–VI/III–V Interfaces

“…The misfit strain at interfaces between III–V/III–V zincblende semiconductors, such as GaSb/GaAs, as well as between elemental semiconductors, such as Ge/Si, is normally relieved by the formation of dislocations lying in {111} planes, with Burgers vectors along either ⟨112⟩ directions (60° perfect dislocation) or ⟨110⟩ directions (Lomer dislocation). ,,,,− The former type of defect frequently dissociates, forming a stacking fault and a pair of partial dislocations. ,,,, Hornstra proposed two atomic structures, shuffle type and glide type, for these dislocations, which were later confirmed by experimental observations. ,, Studies of misfit dislocations (MDs) in several II–VI/III–V heterovalent systems using high-resolution transmission electron microscopy (HR-TEM) have shown that interfacial misfit strain is again relieved primarily through the formation of 60° perfect dislocations and 90° Lomer dislocations, ,,− with the relative amounts of each defect type depending on the amount of lattice mismatch . For example, the large majority of the MDs at a ZnTe/InAs interface were reported to be nondissociated 60° dislocations, whereas there were ∼13% Lomer MDs at a ZnTe/InP interface and ∼39% Lomer MDs at a ZnTe/GaAs interface …”