One step forward from run-to-run critical dimension control: Across-wafer level critical dimension control through lithography and etch process

Zhang, Qiaolin; Poolla, Kameshwar; Spanos, Costas J.

doi:10.1016/j.jprocont.2008.04.016

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…[35] and [37] showed that the etch rate varies radially across the wafer: the etch rate is high at the center of the wafer and decreases toward the edges. Post-exposure bake (PEB) temperatures are higher at the center of the wafer and decreases outwards [38]. Similarly, other processes ranging from resist coat to wafer deformation due to vacuum chuck holding it follow a bowl-shaped trend across the wafer.…”

Section: Physical Origins Of Spatial Variationmentioning

confidence: 99%

Physically Justifiable Die-Level Modeling of Spatial Variation in View of Systematic Across Wafer Variability

Cheng¹,

Gupta

Spanos

et al. 2011

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

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Modeling spatial variation is important for statistical analysis. Most existing works model spatial variation as spatially correlated random variables. We discuss process origins of spatial variability, all of which indicate that spatial variation comes from deterministic across-wafer variation, and purely random spatial variation is not significant. We analytically study the impact of across-wafer variation and show how it gives an appearance of correlation. We have developed a new die-level variation model considering deterministic across-wafer variation and derived the range of conditions under which ignoring spatial variation altogether may be acceptable. Experimental results show that for statistical timing and leakage analysis, our model is within 2% and 5% error from exact simulation result, respectively, while the error of the existing distance-based spatial variation model is up to 6.5% and 17%, respectively. Moreover, our new model is also 6× faster than the spatial variation model for statistical timing analysis and 7× faster for statistical leakage analysis.

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Section: Physical Origins Of Spatial Variationmentioning

confidence: 99%

Physically Justifiable Die-Level Modeling of Spatial Variation in View of Systematic Across Wafer Variability

Cheng¹,

Gupta

Spanos

et al. 2011

IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Self Cite

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“…The variation in different chambers is caused from the behavior of different etching equipments, which means the bias is in the chamber. However, most of the existing studies for advanced process control (APC) have investigated the CD variation reduction regarding the within-wafer, W2W and L2L CD control (El Chemali et al 2003;Williams et al 2005;Zhang, Poolla, and Spanos 2008;Parkinson et al 2010). Little research addresses the CD control between lots etched in different chambers to compensate the bias in etching process.…”

Section: Introductionmentioning

confidence: 99%

Manufacturing intelligence for determining machine subgroups to enhance yield in semiconductor manufacturning

Chien

Chen

Hsü

et al. 2011

Proceedings of the 2011 Winter Simulation Conference (WSC)

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Linewidth control is a critical issue for yield enhancement in semiconductor manufacturing. Most of the existing techniques such as run-to-run control have been developed to control the critical dimension (CD) in photolithography and etching process. However, few studies have addressed the tool behavior that would also affect the result of CD in etching process and the etch bias that is the CD difference between photolithograph and etching process. This study aims to propose a manufacturing intelligence (MI) approach to develop dispatching rules for etching tool in order to reduce the variation of critical dimension measured after etching process and determine the machine subgroups for compensating the etching bias. An empirical study was conducted to estimate the validity of proposed approach and the results showed practical viability of this approach. INTRODUCTIONWith the shrinking feature size of integrated circuits (ICs) in advanced technology, the tolerance of critical dimension (CD) becomes tight and slight. Photolithography and etching are two main process for determining CD in semiconductor manufacturing. The CD is the minimum width of patterned line or the distance between two pattern lines. In particular, the measurement of CD after exposure and development in photolithography process is developed critical dimension (DCD) and the CD measured after etching process called etched critical dimension (ECD), which represents the final linewidth for each layer. The ECD directly affects semiconductor device performance. In order to assure product quality and process yield, ECD must be controlled within the tolerance precisely. ECD variation may occur within a wafer, from wafer-to-wafer (W2W), from lot-to-lot (L2L) and between lots etched in different chambers. The CD variation occurred within a wafer is usually represented by the uniformity. It is generally a consequence of reactor design and determined by factors such as gas flow pattern, chamber symmetry and plasma source configuration. Wafer-to-wafer and lot-to-lot CD variation may occur because of poor repeatability at equipment, process and photolithography on incoming 1893 978-1-4577-2109-0/11/$26.00 ©2011 IEEE

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Novel and practical fabrication of pre-seasoned Y2O3 ceramics through surface modification

Bae,

Jang,

Min

et al. 2024

Ceramics International

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One step forward from run-to-run critical dimension control: Across-wafer level critical dimension control through lithography and etch process

Cited by 9 publications

References 6 publications

Physically Justifiable Die-Level Modeling of Spatial Variation in View of Systematic Across Wafer Variability

Physically Justifiable Die-Level Modeling of Spatial Variation in View of Systematic Across Wafer Variability

Manufacturing intelligence for determining machine subgroups to enhance yield in semiconductor manufacturning

Novel and practical fabrication of pre-seasoned Y2O3 ceramics through surface modification

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