2017
DOI: 10.1038/s41598-017-13143-3
|View full text |Cite
|
Sign up to set email alerts
|

One-step growth of multilayer-graphene hollow nanospheres via the self-elimination of SiC nuclei templates

Abstract: We introduce a one-step growth method for producing multilayer-graphene hollow nanospheres via a high-temperature chemical vapor deposition process using tetramethylsilane as an organic precursor. When the SiC nuclei were grown under an excess carbon atmosphere, they were surrounded via desorption of the hydrocarbon gas species, and graphene layers formed on the surface of the SiC nuclei via the rearrangement of solid carbon during the heating and cooling. The core SiC nuclei were spontaneously removed by the … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
5
0

Year Published

2019
2019
2025
2025

Publication Types

Select...
7

Relationship

1
6

Authors

Journals

citations
Cited by 7 publications
(5 citation statements)
references
References 55 publications
0
5
0
Order By: Relevance
“…After they rearrange and crystallize at a relatively low temperature, a few epitaxial graphene layer form on the surface of SiC nanopowder (SiC/G, step III in Figure a). In addition, the thermal decomposition of SiC may have contributed to the formation of graphene layers on the SiC nanoparticles because the processing temperature was sufficiently high (above 1000 °C). , Specifically, after Si(s) atoms vaporize, residual C(s) atoms may be used as carbon sources for graphene layers, in addition to carbon from external sources. Finally, Pt nanoparticles are deposited on the surface of the SiC/G during the hydrothermal method (step IV in Figure a).…”
Section: Resultsmentioning
confidence: 99%
“…After they rearrange and crystallize at a relatively low temperature, a few epitaxial graphene layer form on the surface of SiC nanopowder (SiC/G, step III in Figure a). In addition, the thermal decomposition of SiC may have contributed to the formation of graphene layers on the SiC nanoparticles because the processing temperature was sufficiently high (above 1000 °C). , Specifically, after Si(s) atoms vaporize, residual C(s) atoms may be used as carbon sources for graphene layers, in addition to carbon from external sources. Finally, Pt nanoparticles are deposited on the surface of the SiC/G during the hydrothermal method (step IV in Figure a).…”
Section: Resultsmentioning
confidence: 99%
“…Hollow carbon nanospheres have been previously shown to be used as sensors and for electrochemical energy storage . Hollow graphene-like carbon nanospheres can be synthesized from the decomposition of tetramethylsilane templates via a SiC intermediate at 2100 °C . Chlorine gas extraction of metal from a metal carbide is another method used to synthesize hollow carbon nanospheres .…”
Section: Results and Discussionmentioning
confidence: 99%
“…82 Hollow graphene-like carbon nanospheres can be synthesized from the decomposition of tetramethylsilane templates via a SiC intermediate at 2100 °C. 83 Chlorine gas extraction of metal from a metal carbide is another method used to synthesize hollow carbon nanospheres. 84 Chlorine-assisted methods often result in some residual chlorine after the metal chloride extraction.…”
Section: Ca(oh)mentioning
confidence: 99%
“…3DGNs prepared by this means possess ultra−high specific surface area and porosity, but the robustness still could not meet the need of the electrodes for high performance lithium–sulfur batteries. A one−step growth method is proposed to prepare multilayer−graphene hollow nanospheres by preparing SiC@C core/shell nanoparticles and evaporating the SiC core under high temperature [ 29 ]. Though pre−fabricated templates is not required for this method, the lack of internal nano−architectures structure of these hollow nanospheres limits their applications.…”
Section: Introductionmentioning
confidence: 99%