One-step MOVPE-grown AlGaInP visible laser with round-beam-spot, small-astigmatism, and high-power characteristics

Abstract

We developed a real-index guided AlGaInP visible laser, a selfaligned stepped substrate (S3) laser, grown by one-step metalorganic vapor phase epitaxy (MOVPE) using simultaneous doping or alternate doping with Zn and Se on a stepped substrate. These doping techniques are based on the dependence of the dopant incorporation on the substrate orientation. As the substrate orientation changes from (100) to (311)A, the effective distribution coefficient of Zn increases and that of Se decreases. The S3 laser has a beam astigmatism of less than 1 pm and small aspect ratio of 1.5, and stable high-power operation of 35 mW at 50°C.