One-Step Solution Deposition of Antimony Selenoiodide Films via Precursor Engineering for Lead-Free Solar Cell Applications

Abstract

Ternary chalcohalides are promising lead-free photovoltaic materials with excellent optoelectronic properties. We propose a simple one-step solution-phase precursor-engineering method for antimony selenoiodide (SbSeI) film fabrication. SbSeI films were fabricated by spin-coating the precursor solution, and heating. Various precursor solutions were synthesized by adjusting the molar ratio of two solutions based on SbCl3-selenourea and SbI3. The results suggest that both the molar ratio and the heating temperature play key roles in film phase and morphology. Nanostructured SbSeI films with a high crystallinity were obtained at a molar ratio of 1:1.5 and a temperature of 150 °C. The proposed method could be also used to fabricate (Bi,Sb)SeI.

Heavy pnictogen chalcohalides for efficient, stable, and environmentally friendly solar cell applications

“…Another approach to SbSeI fabrication was proposed by Choi et al [67]. Because SbSeI is formed through a competitive process involving two phases, namely Sb 2 Se 3 and SbI 3 , two solutions were selected: SbCl 3 -selenourea (SbCl 3 -SeU) solution and SbI 3 solution, which can produce Sb 2 Se 3 and SbI 3 , respectively.…”

“…The asprepared product had an E G of 1.62 eV, which was narrower than that of the SbSI; furthermore, the solar cell exhibited a higher PCE (4.07%). Choi et al also fabricated a Bicontaining SbSeI alloy by modifying the precursor solution used for SbSeI fabrication [67]. They introduced BiI 3 instead of SbI 3 in the solution, which led to the formation of an (Sb, Bi)SeI structure with an absorption edge of ∼880nm, corresponding to 1.41 eV of E G (figure 8(c)).…”

KCN Chemical Etching of van der Waals Sb2Se3 Thin Films Synthesized at Low Temperature Leads to Inverted Surface Polarity and Improved Solar Cell Efficiency

“…To qualify as a van der Waals material, the electronegativity difference between the anion and cation must be lower than 1.5. Several chalcogenides (such as Sb 2 (S,Se) 3 , Bi 2 (S,Se) 3 , GeSe 2 , and SnSe), halides (such as BiI 3 and SbI 3 ), and mixed chalcohalides (such as SbSeI, SbSI, (Sb,Bi)­SI, and BiSeI) are currently being investigated as potential candidates. − …”

Novel synthesis of semiconductor chalcohalide anti-perovskites by low-temperature molecular precursor ink deposition methodologies

“…2,3 Interestingly, recent studies have reported an excellent performance of several chalcohalide materials including SbSI and SbSeI, reaching efficiencies up to a 4% in a very short period of time, benefited by their quasi-1D structure which favors enhanced transport properties. [4][5][6][7] Likewise, transition metal chalcohalides such as Ag 3 SX (X = Br, I) stand out for their crystalline structure analogous to that of the successful halide perovskites, suggesting that they might possess similar defect-tolerant properties. Indeed, their structure presents a perovskite-like arrangement, albeit switching cation sites by anions, and anion sites by cations; thus, the denomination anti-perovskite.…”