One watt Q-Band class A pseudomorphic HEMT MMIC amplifier

Chen, T.H.; Chow, P.D.; Tan, K. H.; Lester, J.A.; Zell, G.; Huang, Ming-Chong

doi:10.1109/mwsym.1994.335234

Cited by 15 publications

(1 citation statement)

References 10 publications

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“…Over the years, extensive effort has been made to realize a low cost manufacturing technology for medium and high power amplifier MMICs with high output power density at millimeter wave frequencies [1][2][3][4][5][6][7][8][9][10][11][12]. We will show the comparison of the results achieved in this work with that of the recently reported benchmarks in this paper.…”

Section: Introductionmentioning

confidence: 99%

A 1/2 Watt High Linearity and Wide Bandwidth PHEMT Driver Amplifier MMIC for Millimeter-Wave Applications

Chen¹,

Nayak²

2006

2006 IEEE MTT-S International Microwave Symposium Digest

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This paper presents a high linearity and wide bandwidth driver/power amplifier MMIC, which covered entire Q-band. The MMIC amplifier was designed for 38GHz Point-toPoint radio application using TriQuint's 0.15 gm power GaAs PHEMT technology. This balanced three-stage power amplifier, with chip size of 2.9 mm2 on 100 gm GaAs substrate, achieved 27 dBm P1dB output power with nominal 18 dB small signal gain over 33 -40 GHz. The RF performance of this power amplifier can be further extended to cover frequencies of 33 -48 GHz. Meanwhile, high output linearity was measured with lower than -34 dBc third order intermodulation (IM3) at 19 dBm per tone output power level. This state-of-the-art millimeter wave power amplifier sets the benchmark of linearity and bandwidth for a single MMIC chip reported to date among Q-band medium power amplifiers.

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