2024
DOI: 10.1039/d4tc03397c
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Online and offline learning using fading memory functions in HfSiOx-based ferroelectric tunnel junctions

Jungwoo Lee,
Chaewon Youn,
Jungang Heo
et al.

Abstract: Ferroelectric tunnel junctions (FTJs) are gaining significant attention as leading candidates for next-generation synaptic devices in neuromorphic computing. In particular, HfOx-based FTJs offer advantages over perovskite-based FTJs, including complementary metal-oxide...

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