Online and offline learning using fading memory functions in HfSiOx-based ferroelectric tunnel junctions
Jungwoo Lee,
Chaewon Youn,
Jungang Heo
et al.
Abstract:Ferroelectric tunnel junctions (FTJs) are gaining significant attention as leading candidates for next-generation synaptic devices in neuromorphic computing. In particular, HfOx-based FTJs offer advantages over perovskite-based FTJs, including complementary metal-oxide...
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