Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage

Ye, Xuerong; Chen, Cen; Wang, Yixing; Zhai, Guofu; Vachtsevanos, George

doi:10.1109/tpel.2016.2602323

Cited by 102 publications

(20 citation statements)

References 22 publications

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“…CM reduces the costs related to maintenance and limit the unexpected interruptions of the power generation. The usual cost of a CM system is about € 10,000 per year per WT [101]. This cost is comparably very low to the maintenance cost of remotely located WTs, e.g.…”

Section: Condition Monitoring (Cm) Of Semiconductormentioning

confidence: 99%

Reliability enhancement of electrical power system including impacts of renewable energy sources: a comprehensive review

Kumar

Saket

Dheer

et al. 2020

IET Generation, Transmission & Distribution

107

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Section: Condition Monitoring (Cm) Of Semiconductormentioning

confidence: 99%

Reliability enhancement of electrical power system including impacts of renewable energy sources: a comprehensive review

Kumar

Saket

Dheer

et al. 2020

IET Generation, Transmission & Distribution

107

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“…Thus, v D (t 3 ) can be considered negligible. Therefore, the expression for t GP in (6) can be re-written as: 3 2 ,…”

Section: Variation Of Gate Plateau Timementioning

confidence: 99%

Precursors of Gate-Oxide Degradation in Silicon Carbide MOSFETs

Karki

Peng

2018

2018 IEEE Energy Conversion Congress and Exposition (ECCE)

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Gate oxide degradation is more critical in Silicon-Carbide (SiC) MOSFETs than in Silicon (Si) MOSFETs. This is because of the smaller gate oxide thickness and the higher electric field that develops across the gate oxide in SiC MOSFETs. While multiple precursors have been identified for monitoring the gate oxide degradation in Si MOSFETs, very few precursors have been identified for SiC MOSFETs. The purpose of this paper is to demonstrate that gate oxide degradation precursors used in Si MOSFETs: a) threshold voltage, b) gate plateau voltage and c) gate plateau time, can also be used as precursors for SiC MOSFETS. Moreover, all three precursors are found to exhibit a simultaneous increasing trend (during the stress time) leading to an increase in on-state loss, switching loss and switching time of the SiC MOSFET. The existing studies of gate oxide degradation mechanisms in SiC MOSFETs, and their effects on threshold voltage and mobility were extended to correlate a variation of all three precursors using analytical expressions. The increasing trends of precursors were experimentally confirmed by inducing gate oxide degradation in commercial SiC MOSFET samples.

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“…In the majority of the cases, these failures are caused by the degradation of the packaging materials used for the switching devices which are exposed to large amounts of thermo-mechanical stress generated by the high operating temperatures and the large discrepancies in coefficients of thermal expansion (CTE) between the material layers [6][7][8][9][10][11]. A condition monitoring setup can provide insights into the degradation behavior of several electrical and thermal parameters of the power electronics during the operating conditions [12,13]. This process, however slow, provides the most valuable data over a long period of time to further improve the design of the individual components and the converter.…”

Section: Introductionmentioning

confidence: 99%

The Sensitivity of an Electro-Thermal Photovoltaic DC–DC Converter Model to the Temperature Dependence of the Electrical Variables for Reliability Analyses

et al. 2020

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The operational expenditures of solar energy are gaining attention because of the continuous decrease of the capital expenditures. This creates a demand for more reliable systems to further decrease the costs. Increased reliability is often ensured by iterative use of design for reliability. The number of iterations that can take place strongly depends on the computational efficiency of this methodology. The main research objective is to quantify the influence of the temperature dependence of the electrical variables used in the electro-thermal model on the reliability and the computation time. The influence on the reliability is evaluated by using a 2-D finite elements method model of the MOSFET and calculating the plastic energy dissipation density in the die-attach and the bond wire. The trade-off between computation time of the electro-thermal model in PLECS (4.3, Plexim, Zurich, Switzerland) and generated plastic energy accuracy obtained in COMSOL (5.3, COMSOL Inc., Burlington, MA, USA) is reported when excluding a certain temperature dependence. The results indicate that the temperature dependence of the input and output capacitors causes no change in the plastic energy dissipated in the MOSFET but does introduce the largest increase in computation time. However, not including the temperature dependence of the MOSFET itself generates the largest difference in plastic energy of 10% as the losses in the die are underestimated.

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Online Condition Monitoring of Power MOSFET Gate Oxide Degradation Based on Miller Platform Voltage

Cited by 102 publications

References 22 publications

Reliability enhancement of electrical power system including impacts of renewable energy sources: a comprehensive review

Reliability enhancement of electrical power system including impacts of renewable energy sources: a comprehensive review

Precursors of Gate-Oxide Degradation in Silicon Carbide MOSFETs

The Sensitivity of an Electro-Thermal Photovoltaic DC–DC Converter Model to the Temperature Dependence of the Electrical Variables for Reliability Analyses

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