Online Test Structure for Measuring Young’s Modulus and Residual Stress of the Top Silicon Layer of Silicon-On-Insulator by a Pull-in Approach

Abstract

In this study, we proposed a novel test structure that can eliminate the effects of gravity and the release process and compared it with the traditional pull-in structure where the beam can vibrate laterally. This novel structure, which simply uses the top silicon layer to form a complete pull-in test structure, processes both a fixed-fixed beam and a fixed electrode on the top silicon layer of silicon-on-insulator (SOI). In addition, the equation concerning the applied voltage, Young's modulus, and residual stress was developed by the energy method. A parametric simulation was performed to obtain a structure with optimized dimensions and satisfy the equation concerning the applied voltage, Young's modulus, and residual stress. Experimental results show that the measurement system used has the advantages of high precision and rapid testing. The measured average Young's modulus is 110.9 GPa and the residual stress is 4.4914 MPa.