Open air annealing effect on the electrical and optical properties of tin doped ZnO nanostructure

Shelke, Vrushali; Bhole, M. P.; Patil, D.S.

doi:10.1016/j.solidstatesciences.2012.03.023

Cited by 26 publications

(10 citation statements)

References 21 publications

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“…However, the Al doped samples have E g values greater than 3.24 eV with maximum value of 3.54 eV for Al 12.30 ZnO sample. The increase in the E g for AZO films indicates an increase in free charge carriers within the films, as explained by the Burstein-Moss effect [33][34][35][36]. Moreover, the increase in the E g with the increasing Al concentration is due to the fact that Al ions tend to occupy ZnO lattice planes, which leads to an increase in the number of transport path of charge carriers into ZnO lattice as confirmed by electrical parameters below.…”

Section: Optical Propertiesmentioning

confidence: 72%

Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

Gürbüz

Kurt

Çalışkan

et al. 2015

Applied Surface Science

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Section: Optical Propertiesmentioning

confidence: 72%

Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

Gürbüz

Kurt

Çalışkan

et al. 2015

Applied Surface Science

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“…The results of the study using different precursors to obtain ZnO thin films show that the crystal quality of ZnO thin films annealed at 350 °C is enhanced, and the intensities of diffraction peaks of XRD measurements are significantly increased; however, it is also noted that vacuum annealing does not change the preferential orientation of ZnO thin films [18]. We also note that increasing the annealing temperature beyond a certain value disturbs the crystal structure [15], and those new defects appear with post-annealing [14,19].…”

Section: Introductionmentioning

confidence: 69%

“…According to the results of these studies, after annealing, the crystal structures of ZnO thin films are enhanced [5] and the (002) orientation becomes weaker, while the (001) orientation becomes more prominent [14,15]. Furthermore, the results of XRD measurements show that the intensities of the diffraction peaks of ZnO films rise, and they shift to higher diffraction angles with annealing [16].…”

Section: Introductionmentioning

confidence: 94%

Influence of annealing and optical aging on optical and structural properties of ZnO thin films obtained by SILAR method

Duman¹,

Güney²

2018

physics

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In this study, zinc oxide (ZnO) thin films are deposited on fluorine doped tin oxide (FTO) substrates by using a successive ionic layer adsorption and reaction (SILAR) method. One of the samples is not annealed and others are annealed at 200, 400 and 600 °C, and all the samples are aged under ultraviolet (UV) light for 19 h.These samples are used to investigate the effect of annealing and aging on the properties of ZnO. Structural properties of the ZnO thin films are examined with scanning electron microscopy (SEM) and X-ray diffraction (XRD). Photoluminescence, transmittance and absorption measurements are used to observe the optical properties of the films. In the literature, there is no study investigating the effect of aging on ZnO thin films deposited with the SILAR method, hence this study fills the gap in the literature.

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“…They are usually prepared on glass substrates for opto-electrical devices because of its low resistivity, high optical transparency, good optical gap energy, as well as excellent adhesion to substrates and chemical stability. Due to the excellent structural and optical properties of doped films, ZnO has been used in a wide variety of applications such as transparent electrodes, ferromagnetism, semiconductors, piezoelectric, optoelectronic, solar cells, spintronics and nanodevices [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. ZnO is one of the most important binary II-VI semiconductor compounds is a natural n-type electrical conductor with a direct energy wide band gap of 3.37 eV at room temperature, a large exciton binding energy (60 meV) [17,18].…”

Section: Introductionmentioning

confidence: 99%

The calculation of the optical gap energy of ZnXO (X = Bi, Sn and Fe)

Benramache

Benhaoua

2016

Open Physics

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Abstract:In this paper, a new mathematical model has been developed to calculate the optical properties of nanomaterials a function of their size and structure. ZnO has good characterizatics in optical, electrical, and structural crystallisation; We will demonstrate that the direct optical gap energy of ZnO films grown by US and SP spray deposition can be calculated by investigating the correlation between solution molarity, doping levels of doped films and their Urbache energy. A simulation model has been developed to calculate the optical band gap energy of undoped and Bi, Sn and Fe doped ZnO thin films. The measurements by thus proposed models are in agreement with experimental data, with high correlation coefficients in the range 0.94-0.99. The maximum calculated enhancement of the optical gap energy of Sn doped ZnO thin films is always higher than the enhancement attainable with an Fe doped film, where the minimum error was found for Bi and Sn doped ZnO thin films to be 2,345 and 3,072%, respectively. The decrease in the relative errors from undoped to doped films can be explained by the good optical properties which can be observed in the fewer number of defects as well as less disorder.

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Open air annealing effect on the electrical and optical properties of tin doped ZnO nanostructure

Cited by 26 publications

References 21 publications

Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

Influence of annealing and optical aging on optical and structural properties of ZnO thin films obtained by SILAR method

The calculation of the optical gap energy of ZnXO (X = Bi, Sn and Fe)

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