Open circuit voltage decay behavior of junction devices

Choo, S.C.; Mazur, R. G.

doi:10.1016/0038-1101(70)90136-x

Cited by 36 publications

(8 citation statements)

References 20 publications

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“…The method [77][78][79][80][81] is based on the measurement of the voltage decay across a forward-biased PN junction when the applied forward bias is abruptly terminated (Fig. 11c).…”

Section: Open-circuit Voltage Decay (Ocvd)mentioning

confidence: 99%

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Khanna

2005

Progress in Quantum Electronics

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“…The method [77][78][79][80][81] is based on the measurement of the voltage decay across a forward-biased PN junction when the applied forward bias is abruptly terminated (Fig. 11c).…”

Section: Open-circuit Voltage Decay (Ocvd)mentioning

confidence: 99%

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Khanna

2005

Progress in Quantum Electronics

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“…The discrepancy between this value of t, (indicated by znm) and our value z , = 47 p is explained by observing that z , , is an effective lifetime which does not take into account the finite thickness of the base layer. An approximate relation between z , , and t, can be obtained by keeping only the first term of the series in equation ( 2) and relating the excess carrier lifetime to the slope of the PVD curve (Nosov 1969, Choo and Mazur 1970, Bassett et a1 1973. Using equation (A35), this gives For f = 0, p1 as obtained from equation (A33) is nil2.…”

Section: Zero Drift Fieldmentioning

confidence: 99%

Theory of open-circuit photovoltage decay in a finite base solar cell with drift field

Sharma

Tewary

1982

J. Phys. D: Appl. Phys.

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A theory of open-circuit photovoltage decay has been developed in a pn junction solar cell by using the Sturm-Liouville R-transform technique. The theory accounts for finite thickness of the base, drift field in the base and a finite surface recombination velocity at the back surface. The theory is applied to analyse some experimental results on photovoltage decay in a solar cell induced by monochromatic light. A good fit is obtained between the theoretical and the experimental results which gives an estimate of excess carrier lifetime, diffusion length and drift field in the base as well as the base thickness. It is shown that the excess carrier lifetime, as determined by the slope of the voltage decay curve, will be an effective lifetime which depends upon the sign and the magnitude of the drift field as well as the thickness of the base.

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“…Such fast switching may be due to the carrier lifetime within the diamond p‐i‐n diode, which was probably short. The effective carrier lifetime of a diamond p‐i‐n diode was investigated using an electrical method referred to as open‐circuit voltage decay technique (OCVD) [46–51]. A

400 \times 400 μ {normalm}^{2}

diamond p‐i‐n diode was used for the OCVD measurement.…”

Section: Carrier Lifetime Within Diamond P‐i‐n Diodesmentioning

confidence: 99%

Reverse‐recovery of diamond p‐i‐n diodes

Traoré

Nakajima

Makino

et al. 2018

IET Power Electronics

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Diamond p-in diodes are one of the most advanced and promising diamond devices for high-power applications. The electrical characteristics of diamond p-in diodes have been extensively investigated in the static state, but their switching properties are unknown, and the recovery waveform is the main concern. This study highlights the switching properties of diamond p-in diodes used as freewheeling diodes in a clamped inductive switching circuit. The recovery waveform was measured by a wide range of conduction current, reverse blocking voltage, and switching speed. For the basic device design used (without edge termination), the p-in diode could be switched from a conducting state at 850 A/cm 2 to a blocking state at 400 V. The reverse recovery time was <150 ns. The reverse-recovery depends on the on-state current level, reverse voltage, and switching rate, illustrated the fast switching of diamond p-in diodes.

show abstract

Open circuit voltage decay behavior of junction devices

Cited by 36 publications

References 20 publications

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Physical understanding and technological control of carrier lifetimes in semiconductor materials and devices: A critique of conceptual development, state of the art and applications

Theory of open-circuit photovoltage decay in a finite base solar cell with drift field

Reverse‐recovery of diamond p‐i‐n diodes

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