Open-Circuit Voltage Decay in Solar Cells

Tewary, Vinod K.; Jain, S.C.

doi:10.1016/s0065-2539(08)60332-7

Cited by 12 publications

(5 citation statements)

References 44 publications

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“…The high photovoltage value of Figure 8h demonstrates that hematite photoanode exhibits good PEC performance. Furthermore, the measurement of the OCP decay after the removal of the light source can provide information about the excess carrier lifetime in p-n diodes or solar cells [59,60]. Using the short-term high frequency measurement and the OCP decay method in a long-term time-scale observation, the OCP decay measurement provides information related to the electrode/surface recombination mechanism along with the minority carrier lifetime in Equation 5below [61].…”

Section: Illuminated Open-circuit Potential (Ocp)mentioning

confidence: 99%

Metal Chalcogenides on Silicon Photocathodes for Efficient Water Splitting: A Mini Overview

et al. 2019

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In the photoelectrochemical (PEC) water splitting (WS) reactions, a photon is absorbed by a semiconductor, generating electron-hole pairs which are transferred across the semiconductor/electrolyte interface to reduce or oxidize water into oxygen or hydrogen. Catalytic junctions are commonly combined with semiconductor absorbers, providing electrochemically active sites for charge transfer across the interface and increasing the surface band bending to improve the PEC performance. In this review, we focus on transition metal (di)chalcogenide [TM(D)C] catalysts in conjunction with silicon photoelectrode as Earth-abundant materials systems. Surprisingly, there is a limited number of reports in Si/TM(D)C for PEC WS in the literature. We provide almost a complete survey on both layered TMDC and non-layered transition metal dichalcogenides (TMC) co-catalysts on Si photoelectrodes, mainly photocathodes. The mechanisms of the photovoltaic power conversion of silicon devices are summarized with emphasis on the exact role of catalysts. Diverse approaches to the improved PEC performance and the proposed synergetic functions of catalysts on the underlying Si are reviewed. Atomic layer deposition of TM(D)C materials as a new methodology for directly growing them and its implication for low-temperature growth on defect chemistry are featured. The multi-phase TM(D)C overlayers on Si and the operation principles are highlighted. Finally, challenges and directions regarding future research for achieving the theoretical PEC performance of Si-based photoelectrodes are provided.

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Section: Illuminated Open-circuit Potential (Ocp)mentioning

confidence: 99%

Metal Chalcogenides on Silicon Photocathodes for Efficient Water Splitting: A Mini Overview

et al. 2019

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“…The high and low level injection curves usually show two different slopes [4,11,12,18,19], as illustrated in the Fig. 2. …”

Section: Summary Of the Ocvd Theorymentioning

confidence: 96%

“…The lifetimes measured are slightly higher compared to the ones measured with the forward current induced OCVD. Indeed, this photo induced method gives estimates of the carrier lifetime that are generally longer than those obtained from the forward induced OCVD [12,19].…”

Section: Photo Induced Ocvdmentioning

confidence: 99%

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Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method

Marcelot¹,

Magnan²

2013

Solid-State Electronics

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“…That is the case of open-circuit voltage decay (OCVD) in which an excess of charges is injected either by illumination (e.g., in the case of a solar cell) or by the application of a forward bias (both in solar cells and raw materials). [125] To distinguish between the two kinds of voltage decays, they are usually referred as OCVD and ABVD (after-bias voltage decay). Here we will not make such distinction and we will refer to these techniques simply as OCVD.…”

Section: Advanced Structural and Functional Characterization Of Doped Mossmentioning

confidence: 99%

Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices

Gatti

Lamberti

Mazzaro

et al. 2021

Advanced Energy Materials

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The need to develop sustainable energy solutions is an urgent requirement for society, with the additional requirement to limit dependence on critical raw materials, within a virtuous circular economy model. In this framework, it is essential to identify new avenues for light‐conversion into clean energy and fuels exploiting largely available materials and green production methods. Metal oxide semiconductors (MOSs) emerge among other species for their remarkable environmental stability, chemical tunability, and optoelectronic properties. MOSs are often key constituents in next generation energy devices, mainly in the role of charge selective layers. Their use as light harvesters is hitherto rather limited, but progressively emerging. One of the key strategies to boost their properties involves doping, that can improve charge mobility, light absorption and tune band structures to maximize charge separation at heterojunctions. In this review, effective methods to dope MOSs and to exploit the derived benefits in relation to performance enhancement in different types of devices are identified and critically compared. The work is focused specifically on the best opportunities coming from the use of non‐critical raw materials, so as to contribute in defining an economically feasible roadmap for light conversion technologies based on these highly stable and widely available compounds.

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Open-Circuit Voltage Decay in Solar Cells

Cited by 12 publications

References 44 publications

Metal Chalcogenides on Silicon Photocathodes for Efficient Water Splitting: A Mini Overview

Metal Chalcogenides on Silicon Photocathodes for Efficient Water Splitting: A Mini Overview

Comparison between TCAD simulated and measured carrier lifetimes in CMOS photodiodes using the Open Circuit Voltage Decay method

Opportunities from Doping of Non‐Critical Metal Oxides in Last Generation Light‐Conversion Devices

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