Open-circuit voltage decay transient in dislocation-engineered Si p–n junction

This work presents experimental study of electrical properties of dislocation engineered Si p-n junction before and after influence of ultrasound waves. We have studied current-voltage characteristics in the dark and upon illumination for forward and reverse biases before and after ultrasound processing. By fitting the theoretically established currentvoltage dependence to the experimentally measured ones the diode ideality factor and saturation current have been estimated. It is found that current transport through the dislocation-engineered Si p-n junction can be controlled by generation-recombination or tunneling recombination mechanisms. Ultrasound is found to modulate electrical properties of the dislocation engineered Si.

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“…This result is consistent with that of Ref. [27] which reported about UST-induced increase of carrier lifetime for the sample A1 ( …”

Section: Resultssupporting

confidence: 94%

A study of electrical properties of dislocation engineered Si processed by ultrasound

Davletova¹,

Karazhanov

2009

Journal of Physics and Chemistry of Solids

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“…Thus, the open-circuit voltage decay rate would depend on the electrons exchange between the conduction and valence bands. The time dependence of V oc decay can be described by the exponential function [43]:…”

Section: Phmentioning

confidence: 99%

Fabrication and characterization of Cu/Cu₂O/CuO/ZnO/Al–ZnO/Ag heterojunction solar cells

Bhunia

Dolai

Dey

et al. 2018

Semicond. Sci. Technol.

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Glass/Cu/Cu 2 O/CuO/ZnO/Al-ZnO/Ag heterojunction solar cell structures have been successfully constructed by using a direct current magnetron sputtering technique. Photovoltaic (PV) solar cells fabricated as above indicated a conversion efficiency >5.6% and an open-circuit voltage (V OC ) ∼0.57 V. Surface modification of CuO during ZnO deposition was identified as the limiting factor for obtaining higher performance heterojunction cells. Magnetron sputtering acted as a promising inexpensive and scalable technique for the fabrication of the above heterojunction for PV application. The diode quality factor for different cells fabricated here varied between 3.35 and 5.6 which were quite high (>2) compared to that for an ideal one. These are connected with mechanisms like interface recombination and tunneling enhanced interface recombination. Series resistance varied between 18.05 and 19.8 Ω cm 2 while shunt resistance varied between 495 and 524 Ω cm 2 . The minority carrier life time ∼7 ms suggested lower recombination losses in our cells culminating in higher short circuit current density compared to copper oxide based cells fabricated by others.

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“…) ; (11) where I TE and I PAT are the TE and the PAT current components, respectively and V R in Equation ( 7) must be replaced by V s . We suppose that V s D 0:5V R and use Equation (11) It is known OE30; 33; 37 that similar dependence is observed if the SBH lowering is caused predominantly by interface states.…”

Section: Leakage Current Mechanismsmentioning

confidence: 99%

Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure

et al. 2016

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The influence of ultrasonic loading on reverse current–voltage characteristics of Mo/n–n+–Si structures has been investigated. The research of leakage current variation has been carried out for various ultrasonic wave frequencies (4.1 and 8.4 MHz), intensities (up to 0.8 W/cm2) and loading temperatures (130–330 K). The observed reversible acoustically induced increase in reverse currents was as large as 60%. It has been found that dominant charge transfer mechanisms are the thermionic emission (at high temperature) and the phonon-assisted tunneling (at low temperature). The ultrasound loading affects both processes due to the decrease of Schottky barrier height and binding energy of the electron on the trap.

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Open-circuit voltage decay transient in dislocation-engineered Si p–n junction

Cited by 16 publications

References 38 publications

A study of electrical properties of dislocation engineered Si processed by ultrasound

A study of electrical properties of dislocation engineered Si processed by ultrasound

Fabrication and characterization of Cu/Cu₂O/CuO/ZnO/Al–ZnO/Ag heterojunction solar cells

Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure

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Open-circuit voltage decay transient in dislocation-engineered Si p–n junction

Cited by 16 publications

References 38 publications

A study of electrical properties of dislocation engineered Si processed by ultrasound

A study of electrical properties of dislocation engineered Si processed by ultrasound

Fabrication and characterization of Cu/Cu2O/CuO/ZnO/Al–ZnO/Ag heterojunction solar cells

Effect of ultrasound on reverse leakage current of silicon Schottky barrier structure

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Fabrication and characterization of Cu/Cu₂O/CuO/ZnO/Al–ZnO/Ag heterojunction solar cells