Charge-induced series resistance switching in GaAs solar cells AIP Advances 2, 042194 (2012) Schottky-barrier solar cell based on layered semiconductor tungsten disulfide nanofilm Appl. Phys. Lett. 101, 263902 (2012) Efficiency enhancement in mesogenic-phthalocyanine-based solar cells with processing additives APL: Org. Electron. Photonics 5, 274 (2012) Efficiency enhancement in mesogenic-phthalocyanine-based solar cells with processing additives Appl. Phys. Lett. 101, 263301 (2012) Improved performance of flexible amorphous silicon solar cells with silver nanowires J. Appl. Phys. 112, 124320 (2012) Additional information on J. Appl. Phys. The behavior of quantum dot, quantum wire, and quantum well InAs/GaAs solar cells is studied with a very simplified model based on experimental results in order to assess their performance as a function of the low bandgap material volume fraction f LOW . The efficiency of structured devices is found to exceed the efficiency of a non-structured GaAs cell, in particular under concentration, when f LOW is high; this condition is easier to achieve with quantum wells. If three different quasi Fermi levels appear with quantum dots the efficiency can be much higher.