Operando Structural Characterization of the E-ALD Process Ultra-Thin Films Growth

Giaccherini, Andrea; Felici, Roberto; Innocenti, Massimo

doi:10.5772/67355

Cited by 4 publications

(6 citation statements)

References 43 publications

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“…This automated system allows a combination of the solutions within the electrochemical cell ensuring good fluid dynamics and a low contamination due to exposure to air. The four samples were grown in two different electrochemical flow cells, the first one designed for the E-ALD process, and the second specifically designed for coupling E-ALD with an operando SXRD investigation [3,20,21]. In both cases, the cell is delimited by the working electrode on one side and by the counter electrode on the other side, while the inlet and the outlet of the solutions were placed on the side walls [19].…”

Section: Methodsmentioning

confidence: 99%

“…The operando measurements were performed at the ID03 beamline of European Synchrotron Radiation Facility (ESRF). The measurements were performed by means of the six circle vertical axis diffractometer installed in the EH1 hutch [3,23]. The diffracted intensity has been registered by means of a MAXIPIX fast readout areal detector [24].…”

Section: Methodsmentioning

confidence: 99%

“…The electrochemical cell was mounted on the diffractometer stage. All measurements were carried out using a 24 keV X-ray radiation in order to allow a high transmission through the EC cell walls and solutions [3,23]. (111) surface cell used as reference system of the reciprocal space.…”

Section: Methodsmentioning

confidence: 99%

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Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

Giaccherini

Russo

Carlà

et al. 2018

Applied Surface Science

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a b s t r a c tElectrochemical Atomic Layer Deposition (E-ALD), exploiting surface limited electrodeposition of atomic layers, can easily grow highly ordered ultra-thin films and 2D structures. Among other compounds Cu x Zn y S grown by means of E-ALD on Ag(111) has been found particularly suitable for the solar energy conversion due to its band gap (1.61 eV). However its growth seems to be characterized by a micrometric thread-like structure, probably overgrowing a smooth ultra-thin films. On this ground, a SXRD investigation has been performed, to address the open questions about the structure and the growth of Cu x Zn y S by means of E-ALD. The experiment shows a pseudo single crystal pattern as well as a powder pattern, confirming that part of the sample grows epitaxially on the Ag(111) substrate. The growth of the film was monitored by following the evolution of the Bragg peaks and Debye rings during the E-ALD steps. Breadth and profile analysis of the Bragg peaks lead to a qualitative interpretation of the growth mechanism. This study confirms that Zn lead to the growth of a strained Cu 2 S-like structure, while the growth of the thread-like structure is probably driven by the release of the stress from the epitaxial phase.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

Giaccherini

Russo

Carlà

et al. 2018

Applied Surface Science

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“…One of the most common SLR in electrochemistry is the under potential deposition (UPD) [7,8]. When the E-ALD outcome is a strictly epitaxial film, the technique is named electrochemical atomic layer epitaxy (ECALE) [9,10]. Indeed, the E-ALD method enables the growth of monolayers of different elements, one above the other through, the alternate deposition of an atomic layer under the surface limited constraints ensured by the exploitation of the SLRs.…”

Section: Introductionmentioning

confidence: 99%

Successes and Issues in the Growth of Moad and MoSe2 on Ag(111) by the E-ALD Method

Vizza

Giaccherini

Giurlani

et al. 2019

Metals

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This paper explores the conditions for the electrodeposition of Moad (molybdenum adlayer) on Ag(111) from alkaline aqueous solution. Moreover, the first stages of the growth of MoSe2 are also presented, performing the deposition of Sead on the deposited Moad. The deposition of Moad on Sead/Ag(111) was also explored. MoSe2 is of interest due to its peculiar optoelectronic properties, making it suitable for solar energy conversion and nanoelectronics. In this study, electrodeposition techniques were exploited for the synthesis process as more sustainable alternatives to vacuum based techniques. The electrochemical atomic layer deposition (E-ALD) method emerges as a suitable technique to grow inorganic semiconductor thin films thanks to its fulfillment of the green energy predicament and a strict structural and morphological control, and this approach has gathered the attention of the scientific community. Indeed, E-ALD exploits surface limited reactions (SLRs) to alternate the deposition of chemically different atomic layers constituting a compound semiconductor. Thus, E-ALD is one of the most promising electrodeposition techniques for the growth of thin-film of compound semiconductors under a strict structural and morphological control. On this ground, E-ALD can be considered an ideal technique for the growth of 2D materials.

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“…The layered structure of the rhombohedral crystal, with Van der Waals interactions between the layers, encourages synthetic opportunities for the direct growth of layered structures or two-dimensional materials. In this study we evaluate the possibility to exploit the Electrochemical Atomic Layer Deposition (E-ALD) method [ 6 , 7 ] to synthesize these kind of materials. E-ALD is a widely known method capable of finely controlling the deposition process, allowing the growth at room temperature and pressure of highly ordered crystalline structures, starting from the first atomic layers, without the need for any further treatment (e.g., thermal annealing).…”

Section: Introductionmentioning

confidence: 99%

Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at the Silver Electrode

et al. 2018

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The Electrochemical Atomic Layer Deposition (E-ALD) technique is used for the deposition of ultrathin films of bismuth (Bi) compounds. Exploiting the E-ALD, it was possible to obtain highly controlled nanostructured depositions as needed, for the application of these materials for novel electronics (topological insulators), thermoelectrics and opto-electronics applications. Electrochemical studies have been conducted to determine the Underpotential Deposition (UPD) of Bi on selenium (Se) to obtain the Bi2Se3 compound on the Ag (111) electrode. Verifying the composition with X-ray Photoelectron Spectroscopy (XPS) showed that, after the first monolayer, the deposition of Se stopped. Thicker deposits were synthesized exploiting a time-controlled deposition of massive Se. We then investigated the optimal conditions to deposit a single monolayer of metallic Bi directly on the Ag.

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Operando Structural Characterization of the E-ALD Process Ultra-Thin Films Growth

Cited by 4 publications

References 43 publications

Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

Operando SXRD of E-ALD deposited sulphides ultra-thin films: Crystallite strain and size

Successes and Issues in the Growth of Moad and MoSe2 on Ag(111) by the E-ALD Method

Investigations on the Electrochemical Atomic Layer Growth of Bi2Se3 and the Surface Limited Deposition of Bismuth at the Silver Electrode

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