Operating-Condition Optimization of MG-MOSFETs for Low-Voltage Application

Ghosh, Soumajit; Miura-Mattausch, Mitiko; Iizuka, T.; Rahaman, Hafizur; Mattausch, H. J.

doi:10.1109/edtm53872.2022.9798366

Cited by 1 publication

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“…However, the efficiencies of front-and backgate-current control by Vgs and Vbg, respectively, are vastly different in nature, due to different oxide thicknesses (FOX and BOX) and presence of an additional substrate region underneath BOX. Although positive back-gate biasing increases the drain current, its efficiency varies over a wide range of values [19].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Low-Voltage-Operating Conditions for MG-MOSFETs

Ghosh

Miura-Mattausch

Iizuka

et al. 2022

IEEE J. Electron Devices Soc.

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Adaptive threshold-voltage controlling of thin-film multi-gate (MG) MOSFETs, using independent back-gate biasing, is applied for realizing latency and power optimization. The controlling-method validity for low-voltage operation is analyzed with the compact model HiSIM-MG, considering all internally induced charges specific for MG controlling. Current-drivability degradations, due to back-gate-charge contribution under positively-biased back-gate voltage and existence of an optimized operating condition, are confirmed. The optimized operating condition is shown to keep the back-gate charge under the weak inversion with a corresponding relatively small back-gate charge. It is also demonstrated, that an input-voltage optimization accompanies the back-gate-voltage optimization, sustaining the optimized low power loss with low input voltage. Circuitperformance improvement of 27% by about 30% reduction of substrate thickness, while keeping switching-power loss small, is also verified.

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Section: Introductionmentioning

confidence: 99%