Abstract:Abstract:We report on the temperature dependence of the photosensitivity of a quantum dot, optically gated, field-effect transistor (QDOGFET) that uses self-assembled semiconductor quantum dots embedded in a high-electron-mobility transistor to detect individual photons of light. Paramount to the operation of the device is differentiating weak, photo-induced signals from random fluctuations associated with electrical noise. To date, QDOGFETs have only been shown to be single-photon sensitive when cooled to 4 K… Show more
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