Operation at 700°C of 6H-SiC UV Sensor Fabricated Using N<sup>+</sup>Implantation

Toda, Tadao; Hata, Masayuki; Nomura, Yasuya; Ueda, Yasuhiro; Sawada, Minoru; Shono, Masayuki

doi:10.1143/jjap.43.l27

Cited by 29 publications

(15 citation statements)

References 8 publications

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“…Therefore, the device performance is degraded with temperature, as evidenced by lower efficiency and increasing dark currents. The development of wide-bandgap-semiconductor UV photodetectors has now emerged, such as GaN-based system, diamond, or SiC-based system, which do not need the insertion of filters, showing their potential for high-temperature applications [5–7]. Recently, we found that the detectors can work at the temperature up to 523 K by using calcium fluoride (CaF 2 ) as the insulation layer in a InGaN-based metal-insulator-semiconductor (MIS) Schottky-type photodiodes [8].…”

Section: Introductionmentioning

confidence: 99%

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Sang

Liao

Sumiya

2013

Sensors

739

435

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Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.

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Section: Introductionmentioning

confidence: 99%

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

Sang

Liao

Sumiya

2013

Sensors

739

435

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“…Moreover, wide-band gap materials are both chemically and thermally stable which is an advantage for devices operating in harsh environments. [12][13][14] Among the high band gap semiconductor category, ZnO is one of the most widely used semiconductors for UV photodetection due to its high chemical stability, low cost, and large band gap of 3.37 eV at room temperature. Mollow et al reported the rst UV photoresponse in ZnO lms in 1940.…”

mentioning

confidence: 99%

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

et al. 2014

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We explored for the first time the ability of a three-dimensional polyacrylonitrile/ZnO material prepared by a low-cost and scalable synthesis method based on the combination of electrospinning and atomic layer deposition (ALD) as a new material with a large surface area to enhance the performance of UV photodetection. The UV photoresponse current was enhanced by a factor of 250 compared to a flat electrode. In addition an increase by a factor of 1.3 of the recovery time has been observed which is negligible versus the huge amount of current enhancement. The greatly improved performance and the good stability of these nanostructured electrodes induce exciting materials for use in UV sensor applications. A IntroductionUV photodetection has been widely studied in the last few years 1-10 due to its large civil and military application elds such as secure space-to-space communications, pollution monitoring, water sterilization, and ame sensing. The semiconductor based UV photodetection process is a simple physical phenomenon based on electron-hole generation into a semiconductor under photon shelling. Basically when a photon with energy larger than the one of the semiconductor band-gap is absorbed, an electron-hole pair is produced. This induces a change of the electrical conductivity properties of the semiconductor. Low band gap energy semiconductors have been widely used for UV photodetection, especially the Si-based photodetectors (E g ¼ 1.1 eV). Despite both their high sensitivity and quick response advantages, low E g UV photodetectors are sensitive to low energy photons (visible and infrared), and thus, they require the insertion of protection lters to avoid signal/ noise related to those low electron energies. Moreover an ultrahigh vacuum and a very high voltage supply were required. 11 The disadvantages of the low E g based photodetectors disappear in the high band gap semiconductors. Moreover, wide-band gap materials are both chemically and thermally stable which is an advantage for devices operating in harsh environments. [12][13][14] Among the high band gap semiconductor category, ZnO is one of the most widely used semiconductors for UV photodetection due to its high chemical stability, low cost, and large band gap of 3.37 eV at room temperature. Mollow et al. reported the rst UV photoresponse in ZnO lms in 1940. 15 Since then, many complex ZnO-based photodetectors with high performance have been reported, such as p-n junction, p-i-n junction and Schottky junction. 3,16-23 ZnO UV sensors have been prepared using different deposition techniques such as Metal Organic Chemical Vapor Phase Deposition (MOCVD), 24,25 laser assisted molecular beam deposition (LAMBD), 26 radio frequency (RF) magnetron sputtering, 27-29 atomic-layer deposition (ALD) 30 and molecular beam epitaxy (MBE). 31,32 Moreover different electrode types such as Au, Ag, Pt, Ni, Pd, Cr, Al, and Ru have been elaborated and their performances have been investigated. Nanostructured ZnO for UV detection was also investigated. They show promisi...

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“…The device has been used for tracking the mode of the combustor, combustion flame dynamics and flame intensity in gas turbine power plants. Another group has reported on a UV flame sensor operating at 700 °C [14]. A SiC photodiode chip has been developed to determine the temperature of a natural gas combustion flame, with a sensitivity of 0.35% per 11 °C change in flame temperature in the 1480 to 1650 °C range [15].…”

Section: Silicon Carbide Sensorsmentioning

confidence: 99%

Sensing Requirements for Real-Time Monitoring and Control in Energy Production

Ghosh

Loloee

2007

2007 IEEE Sensors

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Clean, efficient energy production, such as the gasification of coal (syngas), requires physical and chemical sensors for exhaust gas monitoring as well as real-time control of the combustion process. Following a description of syngas production from coal, we outline the sensing needs for this high temperature, chemically corrosive gas stream.The performance of devices based on the wide-bandgap semiconductor SiC, for monitoring gas composition, flame dynamics and temperature, as well as combustor structural integrity in this extreme environment are reviewed. We have developed a Pt-SiO 2 -SiC micro-device with a dense Pt catalytic sensing film, for fast (<1s) detection of hydrogen containing species at 630 °C. Our SiC sensor can monitor the hydrogen concentration in a 350 °C simulated syngas ambient containing the common interferants CO 2 , CH 4 and CO. Exposure to H 2 S (~1000 ppm) and water vapor does not degrade the sensor performance.

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Operation at 700°C of 6H-SiC UV Sensor Fabricated Using N⁺Implantation

Cited by 29 publications

References 8 publications

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

Sensing Requirements for Real-Time Monitoring and Control in Energy Production

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Operation at 700°C of 6H-SiC UV Sensor Fabricated Using N+Implantation

Cited by 29 publications

References 8 publications

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

Sensing Requirements for Real-Time Monitoring and Control in Energy Production

Contact Info

Product

Resources

About

Operation at 700°C of 6H-SiC UV Sensor Fabricated Using N⁺Implantation