Operation of a Work Function Type SOI Temperature Sensor up to 250°C

Sakurano, K.; Katoh, Hiromi; Chun, Yong-Jin; Watanabe, H.

doi:10.1109/soi.2007.4357896

Cited by 5 publications

(4 citation statements)

References 2 publications

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“…While SOI diode temperature sensors have been utilized for low to medium level temperature monitoring in different applications (e.g., invasive blood velocity measurements [7], temperature rise in SOI devices [8], wall shear stress measurements [9], bonding stress sensing in 3-D chips [10]), there are only few reports that investigate or analyze the performance of SOI diodes based temperature sensors to temperatures up to or beyond 250 C [11]- [13]. One of these [11], describes a work function type SOI diode temperature sensor and compares its performance with that of a diode on bulk silicon substrate.…”

Section: Introductionmentioning

confidence: 99%

“…One of these [11], describes a work function type SOI diode temperature sensor and compares its performance with that of a diode on bulk silicon substrate. The bulk silicon diode exhibited a maximum operable temperature of 150 C only after which the reverse bias leakage current increased drastically, rendering it unusable beyond that temperature.…”

Section: Introductionmentioning

confidence: 99%

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Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

et al. 2010

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Silicon diodes can be used for accurate temperature monitoring up to higher temperatures in a variety of sensors such as micro-machined resistive and calorimetric gas sensors, thermal flow sensors, exhausts, etc. This paper investigates the performance of a diode temperature sensor when operated at ultra high temperatures (up to 780 C). A low leakage silicon on insulator (SOI) diode was designed and fabricated in a 1.0 m CMOS (complementary metal oxide semiconductor) process. The diodes were suspended within a dielectric membrane [formed by post CMOS deep reactive ion etching (DRIE)] for efficient thermal insulation. A CMOS compatible micro-heater was integrated with the diode on the dielectric membrane for local heating. It was found that the diode forward voltage exhibited a linear dependence on temperature as long as the reverse saturation current remained below the forward driving current. We show experimentally that the maximum temperature up to which the linearity of diode's forward voltage output is maintained can be as high as 550 C. Long term continuous operation at high temperatures (400 C and 500 C) showed good stability of the diode voltage drop. Finally, we present a detailed theoretical analysis that helps to determine the maximum operating temperature for the diode and also explains the presence of nonlinearity factors in diode voltage output at ultra high temperatures.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

et al. 2010

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“…Few studies outside our group focus on diodes performance at high temperature [26][27][28]. Throughout the years we have shown that is possible to fabricate a thermodiode that can operate at record temperatures for silicon (from - 200 °C to over 700 °C) [29,30].…”

Section: Temperature Sensorsmentioning

confidence: 99%

CMOS technology platform for ubiquitous microsensors

Udrea

Luca

2017

2017 International Semiconductor Conference (CAS)

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In this paper we review a range of microsensors based on a common CMOS platform technology. The technology features a CMOS core which includes high temperature tungsten metallization and a post-CMOS deep reactive ion etching step of the substrate to release membranes, where the sensing elements are embedded. In one single process we were able to accommodate a variety of sensors such as gas, humidity, pressure, flow, temperature and infra-red detectors and emitters. The benefits of this platform are: (i) ultra-low power consumption, (ii) small form factor, (iii) high reliability and yield (iv) possibility of on-chip electronics and last but not least (v) low unit price.

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“…By knowing the pressure range, which is a design specification, the sensitivity of a piezoresistive sensor can be optimized by optimizing the diaphragm thickness and other dimensions. When a thin diaphragm is subjected to high pressure, it may result in large deflections and will induce non-linearity [11]. Based on the silicon piezoresistive effect and properties of elasticity, one can manufacture pressure sensors by microelectronic integrated manufacturing techniques.…”

Section: Introductionmentioning

confidence: 99%

Computer aided modeling for a miniature silicon-on-insulator MEMS piezoresistive pressure sensor

Komaragiri

2015

Photonic Sens

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Abstract:The silicon-on-insulator diaphragm structure is a combined structure of the silicon dioxide and silicon layer. This work presents a new method to estimate the deflection response of silicon with that of a silicon-on-insulator (SOI) diaphragm structure, based on the burst pressure design approach. It also evaluates the output voltage of the diaphragm under two different conditions, flipped and un-flipped. The new modified analytical model developed and presented in this paper for describing the load deflection of SOI diaphragm is able to predict the deflection accurately when compared with the results obtained by finite element analysis CoventorWare®.Keywords: Micro electro mechanical system (MEMS), finite element analysis (FEA), stacked diaphragm, sensitivity Citation: K.

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Operation of a Work Function Type SOI Temperature Sensor up to 250°C

Cited by 5 publications

References 2 publications

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

Silicon on Insulator Diode Temperature Sensor– A Detailed Analysis for Ultra-High Temperature Operation

CMOS technology platform for ubiquitous microsensors

Computer aided modeling for a miniature silicon-on-insulator MEMS piezoresistive pressure sensor

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