Operation of quantum-dot semiconductor optical amplifiers under nonuniform current injection

Taleb, Hussein; Abedi, Kambiz; Golmohammadi, Saeed

doi:10.1364/ao.50.000608

Cited by 20 publications

(27 citation statements)

References 29 publications

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“…Details of the REM of the investigated QD‐SOA can be found in and are summarized as follows:Photon rate equation

\frac{\partial S}{\partial z} = g_{italicQD} S - αS

where

g_{italicQD} = \sum_{j = 0}^{H} g_{j} (f_{j}^{n} + f_{j}^{p} - 1)

where

g_{j} = g_{j}^{max} \frac{ℏ ω_{j}^{max}}{italicℏω} exp (\frac{- {(ℏω - ℏ ω_{j}^{max})}^{2}}{2 σ_{j}^{2}})

Electron states rate equations.For the GS,

\frac{\partial f_{0}^{n}}{\partial t} = (R_{1, 0}^{italicnc} - R_{0, 1}^{italicne}) - R_{0}^{italicsp} - R_{0}^{italicst}

For the i th ES ( i = 1, 2),

\frac{\partial f_{i}^{n}}{\partial t} = (R_{i + 1, i}^{italicnc} - R_{i, i + 1}^{italicne}) - (R_{i, i - 1}^{italicnc} - R_{i - 1, i}^{italicne}) - R_{i}^{italicsp} - R_{i}^{italicst} .

For the WL state,

\frac{\partial w_{n}}{\partial t} = \frac{I}{q V}

…”

Section: Physical Model and Theorymentioning

confidence: 99%

A simple and accurate dynamical modeling of quantum‐dot semiconductor optical amplifiers

Taleb

Abedi

Golmohammadi

2013

Int J Numerical Modelling

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SUMMARY In this article, quantum‐dot semiconductor optical amplifiers (QD‐SOAs) have been modelled using state space method. To derive this model, we have manipulated the rate equation model of the QD‐SOA, where the average values of the occupation probabilities along the QD‐SOA cavity are considered as the state variables of the system. Using these variables, the distance dependence of the rate equations is eliminated. The derived state space model gives the optical gain and output signal of the amplifier with a high accuracy. Simulation results show that the derived model is not only much simpler and faster than conventional rate equation models, but also the optical gain and output signal of the investigated QD‐SOA are calculated with a higher precision compared to the rate equation model. Copyright © 2013 John Wiley & Sons, Ltd.

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“…Details of the REM of the investigated QD‐SOA can be found in and are summarized as follows:Photon rate equation

\frac{\partial S}{\partial z} = g_{italicQD} S - αS

where

g_{italicQD} = \sum_{j = 0}^{H} g_{j} (f_{j}^{n} + f_{j}^{p} - 1)

where

g_{j} = g_{j}^{max} \frac{ℏ ω_{j}^{max}}{italicℏω} exp (\frac{- {(ℏω - ℏ ω_{j}^{max})}^{2}}{2 σ_{j}^{2}})

Electron states rate equations.For the GS,

\frac{\partial f_{0}^{n}}{\partial t} = (R_{1, 0}^{italicnc} - R_{0, 1}^{italicne}) - R_{0}^{italicsp} - R_{0}^{italicst}

For the i th ES ( i = 1, 2),

\frac{\partial f_{i}^{n}}{\partial t} = (R_{i + 1, i}^{italicnc} - R_{i, i + 1}^{italicne}) - (R_{i, i - 1}^{italicnc} - R_{i - 1, i}^{italicne}) - R_{i}^{italicsp} - R_{i}^{italicst} .

For the WL state,

\frac{\partial w_{n}}{\partial t} = \frac{I}{q V}

…”

Section: Physical Model and Theorymentioning

confidence: 99%

A simple and accurate dynamical modeling of quantum‐dot semiconductor optical amplifiers

Taleb

Abedi

Golmohammadi

2013

Int J Numerical Modelling

Self Cite

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“…The SOA shows particular properties with non-uniform injection [11], but there is no literature to discuss the SOA-RL with non-uniform injection. In fact, the non-uniform injection can be only realized for the SOA with non-uniform active layer, so the non-uniform SOA, instead of the non-uniform injection, will be investigated in this manuscript with segmentation method.…”

Section: Introductionmentioning

confidence: 99%

The λ-Characteristics of the Ring Laser Based on Non-Uniform SOA

Wang¹,

Zhang²,

Lei³

et al. 2013

JCC

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Semiconductor optical amplifier-based ring cavity laser (SOA-RL), which has been widely used in optical communications, optical fiber sensing, and bio-photonics fields, can be tuned at an ultra high speed up to Mega Hertz over 100 nm bandwidth range with high SNR and flatness output. A steady-state model and segmentation algorithms are employed to investigate the gain spectra of four kinds of non-uniform SOA and the lasing wavelength of the SOA-RL. It shows that the dependence of the lasing wavelength on the average width is stronger when the light propagates from narrower to wider end than conversely, and there are some particular structures to show ultra high stability lasing wavelength. It is supposed that the main reason could be the carrier density distribution along the propagation.

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“…In other words, the optical gain of the quantum-dot semiconductor optical amplier (QD-SOA) along the active region is nonlinearly decreasing [15]. Theoretically in order to restore the decreased carrier density in the far side of the QD-SOA, a nonlinear prole of current injection can be applied, providing that the prole dictates a nonuniform increasing current [6]. Practically, the nonuniform current injection can be realized through multi-electrode QD-SOAs [7].…”

Section: Introductionmentioning

confidence: 99%

“…[6]. Summary of the main equations governing the rate of variation in the energy states' occupation probabilities is mentioned as follows: * corresponding author; e-mail: k_abedi@sbu.ac.ir…”

Section: Introductionmentioning

confidence: 99%

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Multi-Electrode Tapered Waveguide Structure for Quantum-Dot Semiconductor Optical Amplifiers

Abedi

Mohadesrad

2013

Acta Phys. Pol. A

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In this paper, by employing two practical methods of multi-electrode design and tapered waveguide structure, compensation techniques to restore declining carrier density along the quantum dot semiconductor optical amplier's waveguide are investigated. In the multi-electrode method, the eects of distributing current via electrodes on the gain and the cross-gain modulation for two, three and four-electrode structures are studied. These characteristics are also investigated for the quantum dot semiconductor optical ampliers with a tapered waveguide structure for the rst time, including waveguides with dierent proles and width ratios. After due comparison between these two methods, optimum parameters of the two techniques will be used simultaneously along each other to form a combined method. Through these design developments, gain as the main feature of the quantum dot semiconductor optical ampliers continuously increases, though cross-gain modulator results show that there is a trade-o between the modulation eciency and improving structure capability of restoring carrier density.

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Operation of quantum-dot semiconductor optical amplifiers under nonuniform current injection

Cited by 20 publications

References 29 publications

A simple and accurate dynamical modeling of quantum‐dot semiconductor optical amplifiers

A simple and accurate dynamical modeling of quantum‐dot semiconductor optical amplifiers

The λ-Characteristics of the Ring Laser Based on Non-Uniform SOA

Multi-Electrode Tapered Waveguide Structure for Quantum-Dot Semiconductor Optical Amplifiers

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