Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect

Kim, Hyun-Jung; Jang, Kyu-Won

doi:10.1166/jnn.2019.17006

Cited by 5 publications

(4 citation statements)

References 1 publication

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“…Additionally, heat models were applied in the simulation to implement the actual device performance for accurate simulation results. Additionally, acceptor-trap doping in AlGaN/GaN HEMTs is generally used to improve the

by reducing the substrate leakage current [ 20 ]. However, current-collapse phenomena such as drain-lag and gate-lag inevitably occur [ 21 ].…”

Section: Methodsmentioning

confidence: 99%

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

Choi,

Kang,

Kim

et al. 2023

Micromachines

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This study investigates the operating characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying HfO2 as the passivation layer. Before analyzing HEMTs with various passivation structures, modeling parameters were derived from the measured data of fabricated HEMT with Si3N4 passivation to ensure the reliability of the simulation. Subsequently, we proposed new structures by dividing the single Si3N4 passivation into a bilayer (first and second) and applying HfO2 to the bilayer and first passivation layer only. Ultimately, we analyzed and compared the operational characteristics of the HEMTs considering the basic Si3N4, only HfO2, and HfO2/Si3N4 (hybrid) as passivation layers. The breakdown voltage of the AlGaN/GaN HEMT having only HfO2 passivation was improved by up to 19%, compared to the basic Si3N4 passivation structure, but the frequency characteristics deteriorated. In order to compensate for the degraded RF characteristics, we modified the second Si3N4 passivation thickness of the hybrid passivation structure from 150 nm to 450 nm. We confirmed that the hybrid passivation structure with 350-nm-thick second Si3N4 passivation not only improves the breakdown voltage by 15% but also secures RF performance. Consequently, Johnson’s figure-of-merit, which is commonly used to judge RF performance, was improved by up to 5% compared to the basic Si3N4 passivation structure.

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by reducing the substrate leakage current [ 20 ]. However, current-collapse phenomena such as drain-lag and gate-lag inevitably occur [ 21 ].…”

Section: Methodsmentioning

confidence: 99%

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

Choi,

Kang,

Kim

et al. 2023

Micromachines

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“…The heat generated in the device due to the self-heating effect (SHE) causes phonon scattering, which reduces electron mobility and degrades device performance. Therefore, it is essential to consider the SHE for an accurate simulation of the HEMT operational characteristics [22,23]. To include the SHE for AlGaN/GaN HEMTs in the simulation, we applied the lattice heat flow equation as:…”

Section: Methodsmentioning

confidence: 99%

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

et al. 2022

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This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying a slant-gate structure and drain-side extended field-plate (FP) for improved breakdown voltage. Prior to the analysis of slant-gate-based HEMT, simulation parameters were extracted from the measured data of fabricated basic T-gate HEMTs to secure the reliability of the results. We suggest three different types of slant-gate structures that connect the basic T-gate electrode boundary to the 1st and 2nd SiN passivation layers obliquely. To consider both the breakdown voltage and frequency characteristics, the DC and RF characteristics of various slant-gate structures including the self-heating effect were analyzed by TCAD simulation. We then applied a drain-side extended FP to further increase the breakdown voltage. The maximum breakdown voltage was achieved at the FP length of 0.4 μm. Finally, we conclude that the slant-gate structures can improve breakdown voltage by up to 66% without compromising the frequency characteristics of the HEMT. When the drain-side FP is applied to a slant-gate structure, the breakdown voltage is further improved by up to 108%, but the frequency characteristics deteriorate. Therefore, AlGaN/GaN HEMTs with an optimized slant-gate-based structure can ultimately be a promising candidate for high-power and high-frequency applications.

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“…The SHEs have hindered the manufacturing of high-quality HEMTs that become dominant when drain bias is applied, leading to sub-optimal breakdowns. Extensive researches have been conducted to overcome the SHEs by various research groups using advanced field plate structures, excessive thermal stability material, and air-water cooling device framework [15][16][17][18][19]. However, even after lots of research, an optimized device has not been proposed to meet the market power-requirements.…”

Section: Introductionmentioning

confidence: 99%

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

Murugapandiyan

Nirmal

Hasan³

et al. 2021

Materials Science and Engineering: B

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Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect

Cited by 5 publications

References 1 publication

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study

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