Operational Transconductance Amplifier in 350nm CMOS technology

Abstract

This paper presents transistor level design of operational transconductance amplifier in CMOS technology. Custom designed, circuit is to be built-in into the mixed-signal, switched capacitor circuit. Amplifier targets relatively high slewrate and moderate open loop gain with megahertz order gainbandwidth. Adopted architecture is discussed appreciating application in switched capacitor circuits. Circuit behavior is examined through set of simulations. Obtained results confirmed desired behavior. Target technology process is TSMC 350nm.

Performance parameters optimization of CMOS analog signal processing circuits based on smart algorithms

“…[20] 48.8 9.32 ----------0.089 4.88 0.5 Pereira-Arroyo et al [44] ---------------3.676 -----0. 1443 -----Laajimi et al [45] 57 55 62° 0.1 -----2.27 -----Bakawale et al [30] ----------55° -----0.025 14.2 -------Lee et al [46] 87 485 70° -----------8 0.35 Yodtean [37] 76 423 86° -----0.4 0.00458 0.18 Mirković et al [47] 57. --------1.12 -----25 14.2 Broomandnia et al [31] -----0.18 ±0.6 -----0.006 0.191 Gajjar and Patel [32] -----0.18 1.8 4 -----0.070 M'Harzi et al [52] -----0.35 ±1.5 100 -----1.28 Garbaya et al [53] RBF-PSO -------------------------Yakout and Alawadi [54] -----0.8 ±2.5 300 -----4.86 Lberni et al [55] NSGA II and MOGA 0.…”