Optical absorption and recombination processes in CdGaInS4 layered crystals

Abstract

A preliminary analysis is given of the optical and photoelectronic properties of CdGaInS4. The analysis of optical absorption, photoconductivity, and photoluminescence allows to deduce an energy level scheme and a model for the photoelectronic processes in CdGaInS4 that are analogous to those that are proved to be typical of other AB2X4 semiconductors. The comparison of the results with the published properties of CdGaInS4 shows that this pseudoternary alloy is characterized by a localized level density lower than that generally found in layered AB2X4 systems.

Investigation of photoconductivity sensitising centres in CdGaInS4layered crystals

“…The experimental results have been interpreted according to the Rose-Bube model. They are in good agreement with the hypothesis of a smaller density of defects in CdGaInS, than in ZnIn2S4 and complete the excitation recombination scheme which has been recently proposed for CdGaInS, (Tarricone et al 1985).…”

Optical absorption and photoelectric properties of Ga2In4S9 single crystals

“…Single crystals of CdGaInS,, Zn,,,In,S,+, (m = 1,2,3); CdAlInS,; CdIn,S,Se,, HgGaInS, and other multinary layered chalcogenides (MLC) present both a scientific and practical interest (ATTOLINI et al; MOLDOVYAN, 1988;HAEUSELER;TARRICONE et al). As a rule these materials are n-type semiconductors, characteristic of which is a strong anisotropy of conductivity, a bright photoluminescence, a high photosensitivity and an exponential optical absorption edge with a temperature independent slope.…”