Optical absorption computation of a D2+ artificial molecule in GaAs/Ga1−x

Quasi-Resonant Tunneling States in Triangular Double-Barrier Nanostructures

“…The development of sophisticated deposition techniques such as molecular beam epitaxy (MBE) 1 and metal-organic chemical vapor deposition techniques 2 made it possible to fabricate new materials based on ban-gap engineering with the required profiles and characteristics These technological man-made materials have enormous potential applications in high-speed and high-frequency devices [3][4][5] Resonant tunneling phenomena in heterostructure materials have been widely used for studying the quasiresonant tunneling energy states and their corresponding lifetimes for rectangle double-barrier structures using different techniques like variational method 6 , Airy's function approach 7 , transfer matrix approach [8][9][10] , and for rectangle triple-barrier heterostructures [11][12][13] The effect of nonparabolicity on the resonant tunneling energies and resonant tunneling lifetimes of symmetric GaAs-Al x Ga 1-x As rectangle double-barrier nanostructured has been reported 14,15 Recently, Elkenany and Elabsy 16 have addressed the effect of pressure on the resonant tunneling energy and resonant frequency tunneling on a rectangle double-barrier Ga 1-x Al x As-GaAs nanostructure. It has been noticed that the structural properties of different profiles affect the electronic and physical properties of novel devices such as quantum rings 17,18 , quantum dots [19][20][21] , quantum wells [22][23][24] , triangular double 25,26 and multi-barriers 27 Recently, triangular novel devices have a great considerable attention experimentally [28][29][30][31][32] and theoretically [25][26][27]…”

Impact of pressure on the resonant energy and resonant frequency for two barriers Ga1−xAlxAs/GaAs nanostructures

“…The ability to adjust semiconductor optical and electronic properties by injecting impurities is one of the most important reasons because they have potential applications in electronic and optoelectronic devices [9]. The impacts of external perturbations like pressure, temperature, electric, magnetic, and intense laser fields on the electronic and optical properties of single, double, or multiple quantum wells with numerous confinement potential types are crucial aspects in condensed matter physics, and these effects have been extensively studied in various situations [10][11][12][13][14][15][16][17].…”