Optical absorption in plasma-deposited silicon oxynitride films

Ance, C.; Chelle, F. De; Ferraton, J.P.; Lévêque, G.; Ordejón, Pablo; Ynduráin, Félix

doi:10.1063/1.107303

Cited by 35 publications

(11 citation statements)

References 4 publications

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“…Such an absorption is absent in silica glass. As Si–N groups are known to have UV absorption, the significant reduction in the UV absorption can be attributed at first glance to the decrease in Si–N bonds. It should be noted, however, that the UV absorption remained even in the film exposed for 24 h (Fig.…”

Section: Discussionmentioning

confidence: 99%

Conversion of Solution‐Derived Perhydropolysilazane Thin Films into Silica in Basic Humid Atmosphere at Room Temperature

et al. 2013

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Spin‐on perhydropolysilazane (PHPS) thin films were converted into mechanically hard silica thin films by an exposure to the vapor from aqueous ammonia. Infrared absorption and X‐ray photoelectron spectroscopic analyses were conducted to clarify the details of the PHPS‐to‐silica conversion and the nature of the silica thin film products. The PHPS‐to‐silica conversion was found to proceed rapidly between 2 and 3 h of exposure via a reaction‐limited process, where the refractive index and the pencil hardness greatly decreased and increased, respectively. Finally, the O/Si mole ratio close to 2 was achieved, which has never been realized in literature for PHPS‐derived silica thin films. It was also found that the condensation of Si–OH groups proceeds in films immediately after PHPS hydrolysis, which is similar to the base‐catalyzed hydrolysis–condensation reaction of silicon alkoxides. Although the silica thin films obtained had refractive indices similar to that of silica glass, high pencil hardness over 9H on Si(100) substrates, and O/Si mole ratios close to 2, it was concluded that they are nonidentical to silica glass, containing trace amounts of Si–OH and Si–H groups.

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Section: Discussionmentioning

confidence: 99%

Conversion of Solution‐Derived Perhydropolysilazane Thin Films into Silica in Basic Humid Atmosphere at Room Temperature

et al. 2013

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“…Hence, our observed orange emission bands at 2 eV (DL1) and 2.16 eV (DL3) could have a similar origin. The slightly higher energy of DL3 band in sample SN3 may be associated with the higher O content and be explained as follows: Ance et al 24 reported that for the SiO x N y films, which are assumed to have a random mixture of Si-N and Si-O, the bottom of the conduction band shifts to higher energy while the valence band maximum does not change. Thus, the optical gap opens with increasing oxygen content, as compared to the original band gap of Si 3 N 4 .…”

Section: B Photoluminescence Propertiesmentioning

confidence: 99%

Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films

Nguyen

Kepaptsoglou

Ramasse

et al. 2012

Journal of Applied Physics

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Structure determination of thin CoFe films by anomalous x-ray diffraction J. Appl. Phys. 112, 074903 (2012) Surface wettability of titania thin films with increasing Nb content J. Appl. Phys. 112, 073502 (2012) Multi-scale order in amorphous transparent oxide thin films J. Appl. Phys. 112, 054907 (2012) Growth of continuous and ultrathin platinum films on tungsten adhesion layers using atomic layer deposition techniques Appl.The atomic structure and optical properties of Si-rich silicon nitride thin films have been for decades the subject of intense research, both theoretically and experimentally. It has been established in particular that modifying the chemical composition of this material (e.g., the Si excess concentration) can lead to dramatic differences in its physical, optical, and electrical properties. The present paper reports on how the incorporation of oxygen into silicon nitride networks influences their chemical bonding and photoluminescence properties. Here, by using a combination of analytical scanning transmission electron microscopy and x-ray photoelectron spectroscopy it is demonstrated that the structure of Si-rich silicon nitride with low O content can be described by the co-existence of Si nanocrystals in a Si 3 N 4 matrix, with occasional localized nano-regions of a Si 2 ON 2 phase, depending on the amount of excess Si. Furthermore, it is shown that the structure of silicon nitride with high O content can be adequately described by a so-called random bonding model, according to which the material consists in bonded networks of randomly distributed tetrahedral SiO x N 4Àx (where x ¼ 0, 1, 2, 3, and 4). Photoluminescence measurements indicate that the effect of O is to introduce a gap state in the band gap of Si 3 N 4 matrix. When a large amount of O is introduced, on the other hand, the photoluminescence measurements are in agreement with a shifted conduction band minimum in the dielectric. For both cases (high and low O content), Si dangling bonds were found to give rise to the deep level in the band gap of the nitride matrix, causing the dominant emission band in the photoluminescence of the films. V C 2012 American Institute of Physics. [http://dx.

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“…The elliptically polarized photoinduced second harmonic generation (PISHG) in SiN x O y films [18] was studied for specimens with different nitrogen to oxygen (N/O) ratios. The theoretical and experimental study of the optical absorption of amorphous plasma deposited SiON films along with the variation of the optical gap E g with respect to the composition and the appearance of the steps in the optical absorption for oxygen-rich samples have been reported by Ance et al [19]. The growth of high quality ultrathin oxynitride films, formed by nitridation of SiO 2 in nitric oxide ambient, using in Situ rapid thermal processing have been reported for the use of CMOS and EEPROM technologies by Bhat et al [20].…”

Section: Introductionmentioning

confidence: 96%