Optical absorption of high quality a-Si:H and a-SixN1−x:H in the low energy region 0.43 eV ≈1.5 eV by PDS

Nonomura, Shuichi; Nishiwaki, Takahiro; Kusakabe, Shinji; Nishimura, Erika; Itoh, Takashi; Nitta, Shoji

doi:10.1016/0022-3093(93)90564-e

Cited by 3 publications

(4 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has been reported that PDS is also effective for thin film samples of 1 μm or less. 9,[11][12][13] Raman spectroscopy is also useful as a vibrational absorption method, but it seems unsuitable for detecting water in glass. 22) In sensitivity, secondary ion mass spectrometry is a highly sensitive analytical technique that can identify and quantify trace impurity elements at the ppb level.…”

Section: -4mentioning

confidence: 99%

“…The PDS detects the refraction change of the medium caused by the heat generated in the non-radiative process as the deflection of the laser beam. [8][9][10][11][12][13][14] Under the condition that the amount of heat generated is proportional to the absorption of light, weak absorption can be detected with high sensitivity. So far, there have been reports of PDS attempts using IR light as the excitation light.…”

Section: Introductionmentioning

confidence: 99%

“…So far, there have been reports of PDS attempts using IR light as the excitation light. [10][11][12] On the other hand, there are few reports on quantitative evaluation of OH concentration in silica glass thin plates by PDS. Nonomura et al 11,12) compared two types of glass substrates for PDS measurements.…”

Section: Introductionmentioning

confidence: 99%

“…[10][11][12] On the other hand, there are few reports on quantitative evaluation of OH concentration in silica glass thin plates by PDS. Nonomura et al 11,12) compared two types of glass substrates for PDS measurements. It was reported that high-purity quartz glass has less OH-related absorption than Barium-Borosilicate glass (Corning 7059) and can reduce the background.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Quantitative evaluation of low-concentration OH impurities in quartz glass by infrared photothermal deflection spectroscopy

Gotoh

Zhu

2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Impurity control in materials is of great importance to achieve excellent performance, yet the quantitative determination of trace impurities, especially OH, is extremely difficult using today’s characterization techniques. Here we report the determination of trace amounts of OH in quartz glass plates by photothermal deflection spectroscopy (PDS) extended to the infrared region. PDS detects trace OH based on the amount of heat generated during non-radiative processes during light irradiation. Infrared absorption spectra of quartz glasses with five different OH concentrations were investigated. In addition to the standard OH band around 3640 cm-1, we find that there are combination tones, overtones, and water-induced IR features. The presence and OH concentration dependence of these species reveals the role of impurities in quartz glass. The PDS is effective in quantifying OH concentrations below 1 ppmw (parts per million weight) in quartz glass plates.

show abstract

Section: -4mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Quantitative evaluation of low-concentration OH impurities in quartz glass by infrared photothermal deflection spectroscopy

Gotoh

Zhu

2023

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Ultra-low frequency CPM of a-Si:H and relaxation

Hasegawa

Nitta

Nonomura

1996

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

Effect of Plasma Damage on Interface State Density Between a-Si:H and Insulating Films

1995

View full text Add to dashboard Cite

The interface state density between a-Si:H and insulating film is very important in characteristics of a-Si:H thin film transistors. In this study, the interface state density was measured by photothermal deflection spectroscopy (PDS). Layered structures of a-SiN, 1.7:H on a-Si:H and a-SiO2.0 on a-Si:H were deposited by P-CVD method. The a-SiN1.7:H layer was grown from a gas mixture of SiH4 and NH3 and the a-SiO2.0 layer was grown from a gas mixture of SiH4 and N2O. While the interface state density of a-SiN1.7:H on a-Si:H structure was smaller than the free surface state density of a-Si:H, that of a-SiO2.0 on a-Si:H structure was larger than the free surface state density of a-Si:H. The difference in the surface state density between these specimens is discussed in terms of plasma damage of a-Si:H surface by the source gases during deposition of insulating layer. Surface of the a-Si:H was treated by plasma of NH3 or N2o gas which is dominant constituent of source gases of insulating layer. Although the surface state density of the N2o plasma-treated sample increases, that of NH3 plasma treated sample does not increase. The shape and intensity of the spectra of N2o plasma-treated sample is similar to that of the a-Sio2.0 on a-Si:H structure. These results indicate that the interface defect between a-Sio2.0and a-Si:H layer was induced by plasma damage of the a-Si:H surface.

show abstract

Optical absorption of high quality a-Si:H and a-SixN1−x:H in the low energy region 0.43 eV ≈1.5 eV by PDS

Cited by 3 publications

References 5 publications

Quantitative evaluation of low-concentration OH impurities in quartz glass by infrared photothermal deflection spectroscopy

Quantitative evaluation of low-concentration OH impurities in quartz glass by infrared photothermal deflection spectroscopy

Ultra-low frequency CPM of a-Si:H and relaxation

Effect of Plasma Damage on Interface State Density Between a-Si:H and Insulating Films

Contact Info

Product

Resources

About