Optical Absorption of Impurities and Defects in Semiconducting Crystals

Pajot, B.; Clerjaud, B.

doi:10.1007/978-3-642-18018-7

Cited by 71 publications

(98 citation statements)

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“…Because of this uncertainty one cannot exclude an intermediate case between the single-phonon relaxation scheme (assuming the binding energy of the lowest excited state to be 52.5 ± 3 meV [1]) and the two-phonon relaxation scheme, if the binding energy of the lowest excited state is ≈ 33 meV (common to all other donors) [7]. Two-phonon interactions in silicon give rise to dominant bands in lattice absorption spectra [8] as well as in Raman spectra of Si [9].…”

Section: (A)]mentioning

confidence: 99%

Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon

et al. 2016

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Subnanosecond dynamics of optically excited electrons bound to excited states of neutral magnesium donor centers in silicon has been investigated. Lifetimes of nonequilibrium electrons have been derived from the decay of the differential transmission at photon energies matching the intracenter and the impurity-to-conduction band transitions. In contrast to hydrogenlike shallow donors in silicon, significantly longer lifetimes have been observed. This indicates weaker two-phonon and off-resonant interactions dominate the relaxation processes in contrast to the single-intervalley-phonon-assisted impurity-phonon interactions in the case of shallow donors in silicon.

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Section: (A)]mentioning

confidence: 99%

Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon

et al. 2016

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“…Emission from the Si:B sample is observed only when pumping on the 4, 4a, 4b lines (Fig. 2), which correspond to the 1Γ þ 8 → 1Γ − 7 , 1Γ − 6 , 4Γ − 8 intracenter transitions (calculated oscillator strengths are 2.60 × 10 −2 , 3.76 × 10 −2 , 2.30 × 10 −3 , correspondingly [16]). This is different from n-Si lasers where pumping from the ground state into several lowest odd-parity impurity transitions leads to laser emission [9].…”

Section: Resultsmentioning

confidence: 99%

“…This induces large shifts of the resonant state energies and it makes the entire impurity spectrum nonhydrogenlike [15,16]. For Si:B, for instance, the calculated shift is in the order of the spin-orbit energy of Δ SO ≈ 44 meV that would result in the 1Γ þ 7 state being localized in the silicon band gap with a binding energy of E Γ7þ ≈ −22 meV [15,16]. This is larger than the binding energy of any other excited boron state (Fig.…”

Section: Introductionmentioning

confidence: 99%

“…Assuming that the 1Γ þ 7 state is localized in the silicon band gap, a fourlevel laser scheme with the 1Γ − 8 → 1Γ þ 7 laser transition can be expected in optically pumped Si:B. In this case, optical pumping is possible with photons of energy equal to or larger than E 1Γ8þ − E 1Γ8− ≈ 30.4 meV and the most effective resonant pumping should occur for the 1Γ þ 8 → 1Γ − 8 transition at 30.4 meV, which has a large oscillator strength (1.77 × 10 −2 [16]) and the longest lifetime of all excited states [23]. If the 1Γ þ 7 state is not in the band gap, this laser mechanism is not possible.…”

Section: Introductionmentioning

confidence: 99%

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Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

et al. 2014

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Stimulated emission in the terahertz frequency range has been realized from boron acceptor centers in silicon. Population inversion is achieved at resonant optical excitation on theintracenter transitions with a midinfrared free-electron laser. Lasing occurs on two intracenter transitions around 1.75 THz. The upper laser levels are the 1Γ − 7 , 1Γ − 6 , and 4Γ − 8 states, and the lower laser level for both emission lines is the 2Γ þ 8 state. In contrast to n-type intracenter silicon lasers, boron-doped silicon lasers do not involve the excited states with the longest lifetimes. Instead, the absorption cross section for the pump radiation is the dominating factor. The four-level lasing scheme implies that the deepest even-parity boron state is the 2Γ þ 8 state and not the 1Γ þ 7 split-off ground state, as indicated by other experiments. This is confirmed by infrared absorption spectroscopy of Si:B.

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“…It can be seen that the band gap of TlN (ZB) increases with increase of the pressure. As a rule, direct band gaps increase and indirect band gaps decrease with increase of the pressure [41]. …”

Section: Band Structurementioning

confidence: 89%

A Comparison of the~Structural, Electronic, Optical and Elastic Properties of Wurtzite, Zinc-Blende and Rock Salt TlN: A DFT Study

et al. 2016

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In this article we investigated structural, electronic, elastic, and optical properties of TlN in three phases, using full potential linear augmented plane wave method in the density functional theory frame with WIEN2k code. The calculations have been done in the generalized Perdew-Burke-Ernzerhof generalized gradient approximation, the generalized Wu-Cohen gradient approximation, the generalized Perdew-Burke-Ernzerhof solid gradient approximation, local density approximation, and the modified Becke-Johnson approximations. In spite of the absence of any experimental data for TlN, our results are compared with other results achieved by other different approximations which shows a good agreement with them. The band gap for TlN in wurtzite and zinc-blende are obtained to be 0.07 and 0.09 eV within modified Becke-Johnson-local density approximation+spin-orbit approximation, respectively. The structural properties such as phase transitions, equilibrium lattice parameters, bulk modulus and its first pressure derivative were obtained using an optimization method. Moreover, we calculated quantities such as elastic constants, the Young modulus, shear modulus, the Poisson ratio, and sound velocities for longitudinal and transverse waves, the Debye temperature and the Kleinman parameters in different approximations and we show that TlN is softer than other nitrides of the III-group. The static calculations predicted that wurtzite to rock salt and zinc-blende to rock salt phase transitions occur at 14.7 GPa and 15.8, respectively. The optical properties of TlN in three phases, calculated in generalized gradient approximation and local density approximation and imaginary part of dielectric function show that TlN in wurtzite and zinc-blende phases have semiconductor properties but rock salt phase do not show. As well as, we investigate the influence of the hydrostatic pressure on the elastic parameters and energy band structures for TlN (zinc-blende) within local density approximation.

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Optical Absorption of Impurities and Defects in Semiconducting Crystals

Cited by 71 publications

References 0 publications

Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon

Dynamics of nonequilibrium electrons on neutral center states of interstitial magnesium donors in silicon

Terahertz Stimulated Emission from Silicon Doped by Hydrogenlike Acceptors

A Comparison of the~Structural, Electronic, Optical and Elastic Properties of Wurtzite, Zinc-Blende and Rock Salt TlN: A DFT Study

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