Optical absorption of irradiated quartz in the near i.r.

Brown, Richard N.; Kahan, A.

doi:10.1016/0022-3697(75)90076-1

Cited by 72 publications

(32 citation statements)

References 18 publications

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“…[A104/H] 4-defects in quartz can be formed by ionising irradiation from the precursor [A10~/Li] 4-and [AIO4/Na] 4-defects (Brown and Kahan 1975;Halliburton et al 1981), by electrodiffusion in an H20 atmosphere (Kats 1962;Dodd and Fraser 1965) or by hydrothermal annealing (Kronenberg et al 1986;Pankrath 1988). In addition to [AIO4/H] 4-defects, paramagnetic…”

Section: Introductionmentioning

confidence: 99%

Polarized IR spectra of synthetic smoky quartz

Pankrath

1991

Phys Chem Minerals

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Abstract. Polarized IR spectra of planeparallel (0001) plates of synthetic smoky quartz, with E rotating around [0001], show that the absorption figures of OH-related absorption bands at 3380 (room temperature), 3365 and 3305 cm-1 (liquid nitrogen temperature, -196 ~ C) are strongly anisotropic and violate the trigonal symmetry of low quartz. This effect is correlated with a non-uniform substitution of Si by A1 on the three symmetrically equivalent Si sites, as revealed by EPR measurements. Random distribution of A1 over the three Si sites, obtained by dry annealing of the samples in air, yields isotropic absorption figures in the (0001) plates. It is thus experimentally evident that the absorption bands at 3380, 3365 and 3305cm -1 are caused by the OHstretching vibrations coupled with A1 substituting for Si. For each experimentally determined integral absorption coefficient of the three absorption bands a theoretical absorption coefficient was calculated, based on the symmetry of low quartz and the given A1 distribution. This was done for various orientations of the OH-dipoles with respect to the a axes of low quartz. By comparing the experimentally determined and calculated absorption coefficients, the orientation of the corresponding OH-dipoles with respect to the a axes could be determined.

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Section: Introductionmentioning

confidence: 99%

Polarized IR spectra of synthetic smoky quartz

Pankrath

1991

Phys Chem Minerals

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“…In synthetic quartz, where as-grown OH defects were extensively studied, it was shown that the absorption bands related to these defects decrease as radiation dose increases [29,30]. The heattreatments performed after each irradiation decreased the intensity of the 3595 cm À 1 absorption.…”

Section: Resultsmentioning

confidence: 98%

Correlating the TL response of γ-irradiated natural quartz to aluminum and hydroxyl point defects

Souza¹,

Guzzo²,

Khoury³

2010

Journal of Luminescence

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“…[10][11][12] A change of the environment of the site, at which OH − is located, occurs when quartz crystals are exposed to radiation. Resonant vibrations of OH − ions, created by the hydrogen bond to adjacent oxygen, forming an Al-OH center, have been investigated by infrared spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Complex impedance spectroscopy of alkali impurities in as-grown, irradiated and annealed quartz

Devautour‐Vinot

Cambon

Prudhomme

et al. 2007

Journal of Applied Physics

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Articles you may be interested inDielectric relaxation and alternating current conductivity of lanthanum, gadolinium, and erbium-polyvinyl alcohol doped films J. Appl. Phys. 112, 034102 (2012); 10.1063/1.4739752An analysis of Mn-Zn ferrite microstructure by impedance spectroscopy, scanning transmission electron microscopy and energy dispersion spectrometry characterizations Variable temperature measurements of the complex dielectric permittivity of lossy AlN-SiC composites from 26. 5-40 GHzThis work compares the dielectric relaxation properties of different crystalline quartz materials, according to their source ͑natural or synthetics͒. It is shown that these relaxation properties are due to a hopping process of alkaline ͑Li + , Na + , and K + ͒ impurities located near ͓Al-O 4 ͔ 5− tetrahedra. A detailed analysis, in terms of the distribution function of the dielectric loss peak, allowed us to perfectly distinguish the different types of as-grown quartz. We show that ͑i͒ the natural quartz has less stable M + charge carriers than the synthetic materials and that ͑ii͒ the homogeneity of the M + trapping sites, created by the ͓Al-O 4 ͔ 5− tetrahedra, strongly depends on the crystal growth conditions. These features were then studied using quartz samples with different treatment conditions: as-grown, irradiated, or annealed at high temperature. We propose that the irradiation greatly facilitates the M + relaxation, by creating additional low energy M + hosting sites, whose number depends on the source of the quartz crystals. We also show that for 100 krad irradiation, the saturation state of the defects is already reached for all the materials under consideration. Finally, we propose that the irradiation followed by annealing at 450°C improves the M + stability and homogeneity in quartz materials, compared with the as-grown materials, this trend being much more relevant for the natural than for the synthetic quartz.

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Optical absorption of irradiated quartz in the near i.r.

Cited by 72 publications

References 18 publications

Polarized IR spectra of synthetic smoky quartz

Polarized IR spectra of synthetic smoky quartz

Correlating the TL response of γ-irradiated natural quartz to aluminum and hydroxyl point defects

Complex impedance spectroscopy of alkali impurities in as-grown, irradiated and annealed quartz

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