2019
DOI: 10.1016/j.optlastec.2019.105655
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Optical activity and electro-optic effect of l-arginine doped KDP single crystals

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Cited by 12 publications
(7 citation statements)
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“…We have previously reported high-accuracy polarimetry and electro-optic measurements with KDP doped with l-Arg (Shopa et al, 2019). Our results did not reveal a noticeable dependence of OA on the concentration of l-Arg.…”
Section: Introductionsupporting
confidence: 44%
“…We have previously reported high-accuracy polarimetry and electro-optic measurements with KDP doped with l-Arg (Shopa et al, 2019). Our results did not reveal a noticeable dependence of OA on the concentration of l-Arg.…”
Section: Introductionsupporting
confidence: 44%
“…However, V π is 540 V for PLZT transparent ceramics, 2800 V for LiNbO 3 single crystal, and 8000 V for KDP single crystal. [ 6,8,25 ] The extinction ratio of the transparent ceramics is 13.8, 32.1, 29.3, 32.2, and 34.8 dB as Sm‐doping content increased from 0 to 2 mol%, respectively. Note that the extinction ratio directly affects the sensitivity of the receiver, and a low extinction ratio will easily lead to code element misjudgment and affect the accuracy of information transmission.…”
Section: Resultsmentioning
confidence: 99%
“…However, the high half-wave voltage (V π ) and easy deliquescent restrict its practical application. [6] LiNbO 3 single crystal, widely used in the field of optical communication, is a benchmark in electro-optic materials. [7,8] However, it has low linear electro-optic (E-O) coefficient of ≈18 × 10 -12 pm V −1 , low damage threshold (<100 MW cm −2 ), and high half-wave voltage V π of 2800 V, making it not applicable in high-power devices.…”
mentioning
confidence: 99%
“…Therefore, many researchers are devoted to developing different electro-optic (EO) materials, such as LiNbO 3 (LN), KH 2 PO 4 (KDP), lead lanthanum zirconate titanate (PLZT), and Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 (PMN-PT). The advantages of LN and KDP single crystals are high optical uniformity, but their low linear EO coefficients (< 20×10 −12 pm•V −1 ) and high half-wave voltages (> 2500 V) limit their wider applications [4][5][6]. The EO property of PLZT is superior to that of LN due to its high quadratic EO coefficient (9×10 −16 m 2 •V −2 ) and relatively low half-wave voltage (< 800 V); however, its significant polarization-dependent scatterings loss and field-induced hysteresis limit its application to high-speed modulation devices [5,7].…”
Section: Introduction mentioning
confidence: 99%
“…The understanding of the relationship among doping, domain structure, ferroelectric polarization, and EO effect is still limited though tremendous progresses have been made in the preparation of the transparent ferroelectric ceramics and the optimization of their EO effects. Besides, few works have fabricated EO modulation devices based on the PMN-PT ceramics because the preparation of the EO devices is difficult, and it is hard to obtain ultra-high EO coefficients and high light transmittance at the same time [3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”
Section: Introduction mentioning
confidence: 99%