Optical Amplifiers

Vasilyev, Michael; Radic, S.

doi:10.1007/978-3-030-16250-4_3

Cited by 6 publications

(1 citation statement)

References 68 publications

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“…Meanwhile, optical line rates are scaling beyond 100 Gb/s/λ [3], constantly pushing for more efficient optical routing and switching functionalities [4]. To date, fiber-optical networks rely mostly on Wavelength Division Multiplexing (WDM) techniques for transmitting multiple channels across a long distance [1], while Erbium Doped Fiber Amplifiers (EDFAs) form the most dominant amplification technology featuring long-validated high-gain, high-linearity, low-noise aspects and applications ranging from short reach and metro to ultralong-haul links [5].…”

Section: Introductionmentioning

confidence: 99%

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform

Vagionas

Tsakyridis

Chrysostomidis

et al. 2022

J. Lightwave Technol.

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During the past years, incorporating Οptical Circuit Switches (OCS) in high-bandwidth optical interconnects has outlined the critical challenges of achieving ultra-low fiber-to-fiber losses (FtF) and constantly decreasing costs for Photonic Integrated Circuits (PICs). This work aims to simultaneously satisfy both the low-loss and low-cost requirements by bringing two of the most successful example-technologies in the history of optics, i.e. EDFAs and ROADMs to a common Si3N4 platform. In particular, the proof-of-concept operation of a lossless four-port Silicon Photonic (SiPho) ROADM is experimentally presented for the first time based on two PIC prototypes on a Si3N4 platform, including a monolithic-integrated 5.9 cm-long spiral Al2O3:Er 3+ Erbium Doped Waveguide Amplifier (EDWA) with 15 dB signal enhancement capabilities and a lattice MZI-interleaver ROAM layout with 100 GHz channel spacing. Considering an ultra-low 2.55 dB FtF loss of the ROADM along with 0.5 dB loss for each of the two coupling-interfaces between the Si3N4 and Al2O3:Er 3+ waveguide layers, a cumulative loss of 3.55 dB is obtained, which can be compensated by the 3.6 dB net gain provided by the EDWA to four incoming WDM signals of -1.7 dBm/channel. Lossless wavelength-routing operation is validated at up to 240 Gb/s WDM (4λ × 60Gb/s) data traffic, while the cascadability of the proposed device is benchmarked in a realistic two-stage optical bus topology with 10 km single mode fiber that selectively routes 4λ × 25Gb/s WDM data channels to any of its eight Drop output ports. This work forms the first demonstration of lossless ROADM operation exclusively on SiPho technology, highlighting a promising roadmap for large scale SiPho switching matrices and more complex PICs co-integrated with EDWAs.

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Section: Introductionmentioning

confidence: 99%

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform

Vagionas

Tsakyridis

Chrysostomidis

et al. 2022

J. Lightwave Technol.

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Investigation of Hybrid S-band Amplifier Performance with 8-channel × 10 Gbaud 16-QAM signals

Guo

Shamsshooli

Akasaka

et al. 2021

2021 European Conference on Optical Communication (ECOC)

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Emerging applications of wavelength conversion

Shamsshooli

Guo

Vasilyev

et al. 2021

2021 IEEE Photonics Conference (IPC)

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Optical Amplifiers

Cited by 6 publications

References 68 publications

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform

Investigation of Hybrid S-band Amplifier Performance with 8-channel × 10 Gbaud 16-QAM signals

Emerging applications of wavelength conversion

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Optical Amplifiers

Cited by 6 publications

References 68 publications

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si3N4 Platform

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si3N4 Platform

Investigation of Hybrid S-band Amplifier Performance with 8-channel × 10 Gbaud 16-QAM signals

Emerging applications of wavelength conversion

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Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform

Lossless 1 × 4 Silicon Photonic ROADM Based on a Monolithic Integrated Erbium Doped Waveguide Amplifier on a Si₃N₄ Platform