Optical and dielectric properties of electrochemically deposited p-Cu<sub>2</sub>O films

Hssi, A. Ait; Atourki, Lahoucine; Labchir, Nabil; Ouafi, Mouad; Abouabassi, K.; Elfanaoui, A.; Ihlal, A.; Bouabid, K.

doi:10.1088/2053-1591/ab6772

Cited by 45 publications

(22 citation statements)

References 34 publications

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“…The result showed a decrease in the energy band gap of nanofilms as deposition time increases. Similar effects on bandgap due to changes in deposition time using electrodeposition techniques have been reported by Refs 40.…”

supporting

confidence: 83%

Investigation of optical properties of zinc oxide nanofilms deposited by electrodeposition technique

Bakhouche

Bouafia

2023

Opt. Eng.

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.Zinc oxide (ZnO) nanofilms were synthesized by electrochemical deposition from a simple aqueous zinc chloride onto indium tin oxide (ITO) substrate. Chronoamperometry experiments were performed to deposit nanofilms at the cathodic potential −1.0 V and time 5000 s at 70°C. Diffraction measurements of x-ray showed the hexagonal wurtzite structure of the as-grown nanofilms and the preferred orientation was along the (002) axis. A well-defined ZnO morphology was generated under −1.0 V for 1000 s on ITO glass. Atomic force microscopy observations explored the effect of electrode coating technique on the microscale ZnO nanofilms. The optical constants and thickness of nanofilms were determined with high precision using spectroscopic ellipsometry. The measurements of photoluminescence demonstrated two emission peaks; the first of which was related to excitonic emissions at about 392 nm, referring to the band gap of ZnO, and the second was related to oxygen vacancies ionized singly at about 490 nm.

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confidence: 83%

Investigation of optical properties of zinc oxide nanofilms deposited by electrodeposition technique

Bakhouche

Bouafia

2023

Opt. Eng.

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“…This confirmed the prospect offered in energy bandgap engineering of cobalt doped zinc selenide by altering deposition time. Similar effects on bandgap due to changes in deposition time using electrodeposition techniques have been reported by [44,[47][48][49][50].…”

Section: Wavelength (Nm)supporting

confidence: 72%

“…Transmittance values of the deposited thin films fall between 24.40% and 73.15%. Similar effects on the absorbance of thin film as deposition time increases have been obtained by [44,48]. Figure 6 shows the graph of reflectance against wavelength for cobalt doped zinc selenide thin films deposited at different values of deposition time.…”

Section: Optical Propertiessupporting

confidence: 70%

“…With this range of absorbance values, the deposited thin films of cobalt doped zinc selenide could be found applicable in the buffer layer of a thin-film solar cell and other optoelectronics device fabrications. Similar effects on the absorbance of thin film as deposition time increases have been obtained by [44,47]. Figure 5 shows the graph of transmittance spectra plotted against wavelength for cobalt doped zinc selenide thin films synthesized under different deposition times.…”

Section: Optical Propertiessupporting

confidence: 69%

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Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

Ezenwaka

Okoli²,

Okereke

et al. 2021

Nanoarchitectonics

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Time optimized cobalt-doped zinc selenide thin films have been successfully electrodeposited on fluorine-doped tin oxide substrates. The films were deposited at the varying time of 1 min, 3 mins, and 5 mins respectively. Film thickness, optical, structural, electrical, and morphological properties of the deposited thin films were evaluated. Film thickness estimated using the gravimetric method increased from 294.35 nm to 399.62 nm as deposition time increased. Optical properties showed that the absorbance of the films ranged from 13.58% to 83.15% and was found to increase as deposition time increased. Transmittance ranged from 24.40% to 73.15% and was found to decrease as deposition time increased. The reflectance of the films was found to be low while the energy band gap ranged between 2.10 eV and 2.85 eV. Structural properties confirmed the deposition of ZnSe thin film with crystallite size values that fall between 14.68 nm and 18.60 nm. Dislocation density is ranged from 4.66 × 1015 lines/m2 to 2.97 × 1015 lines/m2 while microstrain ranged between 8.53 × 10-3 and 5.83 × 10-3. Crystallite sizes of the films were found to increase as deposition time increased while dislocation density and microstrain were found to decrease as deposition time increased. Electrical properties showed that the deposited films are semiconducting films with electrical resistivity values of 1.54 × 105 Ω cm-1.83 × 104 Ω cm and electrical conductivity values of 6.30 × 10-6 S/cm-5.47 × 10-5 S/cm. The micrograph of the films showed that the films were made up of nanoparticles and nanofibres of different dimensions. Energy-Dispersive X-Ray Spectroscopy (EDS) spectra of the films confirmed the presence of cobalt, zinc, and selenium.

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“…The absorbance spectra show high transparency up to 300 nm for the ITO substrate, and an absorption edge localized between 450 and 500 nm for the Cu 2 O films, which corresponds to the excitonic band gap of Cu 2 O films. The spectra of the Cu 2 O_230 nm, Cu 2 O_140 nm and Cu 2 O_90 nm films display an increase in absorbance as a consequence of the thickness increase, a behavior already observed for films grown with different techniques [ 43 ]. Transmission spectra of ITO/quartz and Cu 2 O thin films are reported in Figure 4 b, while in Figure S3 the transmission of the ITO/quartz annealed at 250 °C is compared to the untreated ITO/quartz substrate.…”

Section: Resultsmentioning

confidence: 71%

A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells

et al. 2022

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Copper oxide thin films have been successfully synthesized through a metal–organic chemical vapor deposition (MOCVD) approach starting from the copper bis(2,2,6,6-tetramethyl-3,5-heptanedionate), Cu(tmhd)2, complex. Operative conditions of fabrication strongly affect both the composition and morphologies of the copper oxide thin films. The deposition temperature has been accurately monitored in order to stabilize and to produce, selectively and reproducibly, the two phases of cuprite Cu2O and/or tenorite CuO. The present approach has the advantages of being industrially appealing, reliable, and fast for the production of thin films over large areas with fine control of both composition and surface uniformity. Moreover, the methylammonium lead iodide (MAPI) active layer has been successfully deposited on the ITO/Cu2O substrate by the Low Vacuum Proximity Space Effusion (LV-PSE) technique. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM) analyses have been used to characterize the deposited films. The optical band gap (Eg), ranging from 1.99 to 2.41 eV, has been determined through UV-vis analysis, while the electrical measurements allowed to establish the p-type conductivity behavior of the deposited Cu2O thin films with resistivities from 31 to 83 Ω cm and carrier concentration in the order of 1.5–2.8 × 1016 cm−3. These results pave the way for potential applications of the present system as a hole transporting layer combined with a perovskite active layer in emergent solar cell technologies.

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Optical and dielectric properties of electrochemically deposited p-Cu₂O films

Cited by 45 publications

References 34 publications

Investigation of optical properties of zinc oxide nanofilms deposited by electrodeposition technique

Investigation of optical properties of zinc oxide nanofilms deposited by electrodeposition technique

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells

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Optical and dielectric properties of electrochemically deposited p-Cu2O films

Cited by 45 publications

References 34 publications

Investigation of optical properties of zinc oxide nanofilms deposited by electrodeposition technique

Investigation of optical properties of zinc oxide nanofilms deposited by electrodeposition technique

Properties of Electrosynthesized Cobalt Doped Zinc Selenide Thin Films Deposited at Varying Time

A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells

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Optical and dielectric properties of electrochemically deposited p-Cu₂O films