1998
DOI: 10.1016/s0022-0248(98)00422-9
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Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique

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Cited by 301 publications
(125 citation statements)
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“…It has been observed earlier by other groups [13,14] that upon Mn doping in ZnO the band gap reduces for low concentration doping (< 3 mol% of Mn) and for higher concentration ( > 3 mol%) the band gap increases as expected on the basis of virtual crystal approximation (VCA) because of the band gap of the MnO ~ 4.2 eV. In many dilute magnetic semiconductor (DMS) systems such deviation from the linear monotonic increase in the form of "band gap bowing" has been observed [15][16][17][18][19][20][21] …”
Section: Introductionmentioning
confidence: 83%
“…It has been observed earlier by other groups [13,14] that upon Mn doping in ZnO the band gap reduces for low concentration doping (< 3 mol% of Mn) and for higher concentration ( > 3 mol%) the band gap increases as expected on the basis of virtual crystal approximation (VCA) because of the band gap of the MnO ~ 4.2 eV. In many dilute magnetic semiconductor (DMS) systems such deviation from the linear monotonic increase in the form of "band gap bowing" has been observed [15][16][17][18][19][20][21] …”
Section: Introductionmentioning
confidence: 83%
“…The small signal at 3411 cm 21 observed is probably due to the contact of the ZnO sample with air resulting in adsorption of a small amount of water vapour. 15 …”
mentioning
confidence: 99%
“…It was believed that such TiO 2 -OH groups arise due to the hydrolysis reaction in the microemulsion process [20]. Peak at 1628 cm −1 is attributed to bending modes of -OH groups of water molecules adsorbed on the surface of catalyst [21]. Peak at 1389 cm can be assigned to C-O stretching in carbonyl.…”
Section: Ftir Studymentioning
confidence: 99%