Optical and electrical investigations of imperfection levels in Zn3P2

Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality

“…Previous experimental studies of Zn 3 P 2 , including SAE grown Zn 3 P 2 , 16 have shown transitions or defect levels in the range of 0.14–0.20 eV, 0.25–0.29 eV, and 0.36 eV below the bandgap, which puts them in the potential range of these rotated interfaces. 6,16–18,36,37,39–44,72 While there may be other origins of transitions in this range acting in parallel, these rotated domains are a potential source. With this in mind, we inspected the surface of zigzag nanowires grown by a vapour–liquid–solid (VLS) growth mechanism (as opposed to the vapour–solid (VS) one of SAE) that are terminated with (101) facets, but still exhibit sub-bandgap emission in a similar range as to those calculated here.…”

“…35–38 Various defect levels in the bandgap have been experimentally probed by various groups previously, but very few have been able to describe the exact origins. 36,37,39–44 Conversely, other studies have observed defects, such as rotated domains observed through electron microscopy, but their exact nature and influence on the materials properties is yet to be ascertained. 16 This creates a need for systematic and comprehensive studies able to correlate the different factors related to defect structure and their influence in Zn 3 P 2 in order for it to realise its potential.…”

Solution-Processed Zinc Phosphide (α-Zn3P2) Colloidal Semiconducting Nanocrystals for Thin Film Photovoltaic Applications

“…An insulating shell such as this could account for the large resistivity of the Zn 3 P 2 films and explain the poor charge transport in the Zn 3 P 2 NP films. However, it has previously been shown that the resistivity of bulk Zn 3 P 2 can vary between 10 and 10 4 Ω·cm, due to varying levels of intrinsic charge carrier concentrations . As such, further investigation into the mechanisms of electrical conduction in these Zn 3 P 2 NP films is needed to elucidate the rate-limiting steps governing charge transport.…”

First-principles study of intrinsic and hydrogen point defects in the earth-abundant photovoltaic absorber Zn3P2

“…24,25 On the other hand, less attention has been devoted to identifying deep-level defects in Zn 3 P 2 , in spite of accumulating experimental evidence for presence of deep levels in the band gap of Zn 3 P 2 . [26][27][28] Deep-level defects may act as nonradiative carrier recombination centers which would limit the efficiency of Zn 3 P 2 solar cells.…”