Optical and electrical properties of thin-film hetero-structures of the In₂O₃–ZnO system

Effect of the Bilayer Period of Atomic Layer Deposition on the Growth Behavior and Electrical Properties of the Amorphous In–Zn–O Film

“…Similar phenomena were also observed for the ALD-Al 2 O 3 /ZnO and Al 2 O 3 /HfO x with critical bilayer thicknesses of 1.3 and 1.0 nm, respectively. Notably, the impact of the bilayer thickness on the microstructure of IZO thin films was also reported by the sequential layer-by-layer ion beam sputtering of In 2 O 3 and ZnO . The authors prepared the In 2 O 3 /ZnO multilayer structure by varying the equivalent sublayer thicknesses of In 2 O 3 and ZnO from 0.3 to 1.7 nm, and showed that the transition from a well-intermixed to a layered structure occurred at 1.5 nm sublayer thickness.…”

“…This structural evolution can be determined by the solid-state diffusion in the deposited film, which is related to the thickness of each sublayer and the diffusion characteristics of the cations into the adjacent layers. The effect of n b on the film microstructure has been reported for ALD-ZnO/Al 2 O 3 , ZnO/SnO 2 , and SnO 2 /TiO 2 films. − In the case of Al 2 O 3 /ZnO, it has been reported that the grain size of the ZnO sublayer decreased as the n b decreased, and the film microstructure eventually transformed from nanocrystalline into amorphous. As a result, the elastic modulus of the Al 2 O 3 /ZnO nanolaminate decreased as the n b decreased.…”

Characterization of CdxTeyOz/CdS/ZnO Heterostructures Synthesized by the SILAR Method

“…In particular, ZnO has been the subject of significant research for many years due to its successful synthesis technology and its promise for numerous applications [21,22]. Although ZnO has a low surface nanostructuring capacity, this material is now widely used as a substrate for the synthesis of multilayer heterostructures [23,24]. It is important to note here that, in this aspect, a wide-gap CdS semiconductor, widely used in optoelectronics and as a phosphor, can be a promising and inexpensive material [25,26].…”

Влияние кислорода и паров воды на структурные превращения в наногранулированных композитах (Co-=SUB=-40-=/SUB=-Fe-=SUB=-40-=/SUB=-B-=SUB=-20-=/SUB=-)-=SUB=-x-=/SUB=-(LiNbO-=SUB=-3-=/SUB=-)-=SUB=-100-x-=/SUB=-

“…Многокомпонентные гетерогенные системы с аморфной структурой обладают уникальным сочетанием физических свойств, которые сложно получить в кристаллических соединениях [1][2][3]. Такие материалы могут применяться в устройствах для хранения информации [4], прозрачной электроники [5][6], разного рода датчиках [7][8] и других областях [9]. В частности, наногранулированный композит (Co 40 Fe 40 B 20 ) x (LiNbO 3 ) 100−x является перспективным материалом для применения в качестве функциональной среды при разработке мемристивных элементов для создания многоуровневой памяти и других устройств, в которых используется эффект обратимого резистивного переключения (РП) из одного состояния (высокоомного) в другое (низкоомное) и обратно [10][11][12].…”