Optical and electrical properties of proton-implanted p-GaSb for electrical isolation

Abstract

The effect of proton implantation as solation implant and subsequent annealing on the optical absorption and electrical resistivity of low-bandgap p-GaSb is reported. The measured transmittance spectra indicates that implantation creates a distribution of energy levels extending into the bandgap. Electrical measurements show that the average sheet resistance of the implanted layer increases only by an order of magnitude from its pre-implantation value at a proton dose of ~1013 cm-2 followed by 200°C annealing. It is also shown that annealing reduces the implantation-induced optical absorption while still retaining a high electrical resistivity.