Optical and electrical properties of chlorinated and hydrogenated amorphous silicon prepared by glow discharge

Chevallier, J.; Kalem, Ş.; Dallal, Shawqi Al; Bourneix, J.

doi:10.1016/0022-3093(82)90148-x

Cited by 31 publications

(7 citation statements)

References 34 publications

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“…The main advantage of silicon tetrachloride is that it is significantly cheaper than silane. For the same reason, silicon tetrachloride has also attracted interest as a silane replacement for the growth of amorphous silicon thin films [18]. Chlorinated precursors such as germanium tetrachloride have also already been used for the non-thermal plasma synthesis of germanium nanocrystals [19].…”

Section: Introductionmentioning

confidence: 99%

Silicon nanocrystal production through non-thermal plasma synthesis: a comparative study between silicon tetrachloride and silane precursors

Yasar-Inceoglu¹,

Lopez²,

Farshihagro³

et al. 2012

Nanotechnology

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Silicon nanocrystals with sizes between 5 and 10 nm have been produced in a non-thermal plasma reactor using silicon tetrachloride as precursor. We demonstrate that high-quality material can be produced with this method and that production rates as high as 140 mg h(-1) can be obtained, with a maximum precursor utilization rate of roughly 50%. Compared to the case in which particles are produced using silane as the main precursor, the gas composition needs to be modified and hydrogen needs to be added to the mixture to enable the nucleation and growth of the powder. The presence of chlorine in the system leads to the production of nanoparticles with a chlorine terminated surface which is significantly less robust against oxidation in air compared to the case of a hydrogen terminated surface. We also observe that significantly higher power input is needed to guarantee the formation of crystalline particles, which is a consequence not only of the different gas-phase composition, but also of the influence of chlorine on the stability of the crystalline structure.

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Section: Introductionmentioning

confidence: 99%

Silicon nanocrystal production through non-thermal plasma synthesis: a comparative study between silicon tetrachloride and silane precursors

Yasar-Inceoglu¹,

Lopez²,

Farshihagro³

et al. 2012

Nanotechnology

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“…inactive but becomes activated by alloying the Si matrix with an element, such as sulphur, whose elecronegativity is sufficiently different from Si so as to be able to induce charge transfer through the back bonds. In fact, many authors have reported the association of an i.r band with lattice vibrations at 510 cm -1 in a-Si,F:H alloys [32,33], and at 500 cm -1 in a-Si,Cl:H alloys [34]. Both F and Cl are more electronegative than Si (2.65).…”

Section: Sulphur-induced Bands In the 400-500 CM -1 Regionmentioning

confidence: 99%

“…There has been an intensive research work during the past two decades to search for stable and low defect density material for use in tandem with a-Si:H-based photovoltaic devices [1][2][3][4][5]. a-Si:H-based alloys proved to be attractive materials with a wide range of applications including solar cells, photoreceptors, displays, and imaging devices [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic and Optoelectronic Properties of Hydrogenated Amorphous Silicon-Chalcogen Alloys

Dallal¹

2015

Superalloys

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Hydrogenated amorphous silicon-chalcogen alloy thin films have been the subject of growing interest during the past two decades. Thin films of these alloys are usually prepared by the decomposition of SiH 4 and H 2 S or H 2 Se gas mixtures in a radiofrequency plasma glow discharge at a substrate temperature of 250°C. The alloy composition is varied by changing the gas volume ratio R V = [chalcogen/ silane]. Infrared spectroscopy is used to explore the bonding structure of the alloy.The material exhibits hydrogen-induced bands, normally observed in a-Si:H spectra and other chalcogen-induced bands resulting from bonding chalcogen atoms with hydrogen and silicon. Analysis of the vibrational spectra of this material reveals the presence of significant levels of Si-chalcogen-SiH n configurations. Optical and electrical measurements show that increasing the chalcogen content results in an increase of the optical (Tauc) gap and a decrease in dark conductivity and photoconductivity. Subgap absorption measurements are employed to probe the Urbach energy and defect density. Upon increasing the chalcogen content, a broadening of band tails and an increase in defect density is observed. These results are shown to be consistent with photoluminescence measurements carried out on these materials.

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“…Hydrogen evolution measurements have been applied for the characterization of the films and it has been shown that hydrogen evolution spectra are in a strong correlation with the microstructure of the a-Si : H films [3, 6, 71. Recently, attention has been devoted to halogenated amorphous silicon films [8 to lo]. It has been expected that the partial substitution of hydrogen by halogen atoms would influence the hydrogen evolution, affecting the bond strength of hydrogen in the silicon network.…”

Section: Introductionmentioning

confidence: 99%

Annealing behaviour of a-Si:H:Cl films

Danesh

1985

phys. stat. sol. (a)

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Thermal annealing of a‐Si:H:Cl films with various chlorine concentrations is carried out at 360 and 420°C. The effect of thermal annealing is studied by measuring the temperature dependence of the dark conductivity. The variation of the values of the low temperature conductivity and the activation energy is related to the low temperature hydrogen evolution. It is found that the presence of chlorine in the silicon network increases the temperature of hydrogen evolution. Two possible explanations are proposed suggesting the lower concentration of the hydrogen‐rich clustered phase in a‐Si:H:Cl films and the effect of the neighbour chlorine atoms on the SiH bond strength.

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Optical and electrical properties of chlorinated and hydrogenated amorphous silicon prepared by glow discharge

Cited by 31 publications

References 34 publications

Silicon nanocrystal production through non-thermal plasma synthesis: a comparative study between silicon tetrachloride and silane precursors

Silicon nanocrystal production through non-thermal plasma synthesis: a comparative study between silicon tetrachloride and silane precursors

Spectroscopic and Optoelectronic Properties of Hydrogenated Amorphous Silicon-Chalcogen Alloys

Annealing behaviour of a-Si:H:Cl films

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