Optical and electrical properties of electron-irradiated Cu(In,Ga)Se2 solar cells

Hirose, Yuiko; Warasawa, Moe; Takakura, Kenichiro; Kimura, Shinichi; Chichibu, S. F.; Ohyama, H.; Sugiyama, Mutsumi

doi:10.1016/j.tsf.2010.12.132

Cited by 10 publications

(10 citation statements)

References 17 publications

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“…The X-ray diffraction patterns and surface scanning electron microscope images did not change under proton irradiation (data not shown). Previous reports also showed that PL peak intensities due to deep level defects in CIGS decreased under electron 16) and proton 8) irradiation.…”

Section: Resultsmentioning

confidence: 77%

“…Note that the spectral discontinuities at 0.88 and 1.16 eV are due to Wood's anomaly 21,22) and laser ghosts originating from scattering by the diffraction grating, respectively. The PL peak intensity at 0.94 eV, which may be assigned to the transition from the Cu-interstitial level to the Cu-vacancy level (Cu i -V Cu ), 16,23,24) decreased with increasing irradiation fluence. On the other hand, the relative PL peak intensity of approximately 0.8 eV increased with increasing irradiation fluence.…”

Section: Resultsmentioning

confidence: 99%

“…16) We found that particle irradiation tended to cause degradation primarily around the interfaces of the several layers that compose CIGS solar cells. These results suggest that the interfaces play an important role in defining the solar cell performance.…”

Section: Introductionmentioning

confidence: 81%

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Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se₂ Solar Cells

Hirose

Warasawa

Tsunoda

et al. 2012

Jpn. J. Appl. Phys.

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The optical and electrical properties of proton irradiated Cu(In,Ga)Se 2 (CIGS) solar cells and the composed thin films such as transparent conducting oxide (TCO) and CIGS were investigated. The transmittance and resistivity of TCO window layers remained constant for a fluence of up to 3 Â 10 15 cm À2 . For CIGS thin films, the photoluminescence (PL) peak intensity tended to decrease, possibly because the number of nonradiative recombination centers increased under proton irradiation. In addition, the PL spectra of irradiated CIGS solar cells suggested that the CIGS absorber layer and/or the depletion layer around the CdS/CIGS interface are more prone to degrade than other layers. These results constitute the first step in clarifying the degradation mechanism of CIGS solar cells. #

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 99%

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Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se₂ Solar Cells

Hirose

Warasawa

Tsunoda

et al. 2012

Jpn. J. Appl. Phys.

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“…Above 1 Â 10 16 cm À2 , the values of V OC , FF, and η decreased. As the transmittance and resistivity of the ZnO and CdS thin films did not change with the fluence up to %10 18 cm À2 , [30,31] this result indicates that the CIGS bulk layer is more prone to degradation than the other layers and/or the depletion layer around the CdS-CIGS interface. At the electron fluence from 1 Â 10 15 to 3 Â 10 15 cm À2 , the CIGS solar cells show not only self-healing properties but also the possibility of power enhancement during long-term space application through an increase in V OC .…”

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confidence: 91%

The Effect of Electron Irradiation on Cesium Fluoride‐Free and Cesium Fluoride‐Treated Cu(In_1−x,Ga_x)Se₂ Solar Cells

Khatri

Lin

Nakada

et al. 2019

Physica Rapid Research Ltrs

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Herein, the effects of electron irradiation on cesium fluoride (CsF)‐free and CsF‐treated Cu(In1−x,Gax)Se2 (CIGS) solar cells with fluence from 1 × 1013 to 1 × 1017 cm−2 are investigated. Both CsF‐free and CsF‐treated CIGS solar cells exposed to fluence up to 3 × 1015 cm−2 show self‐healing properties, due to the soaking effect from electron bombardment. This feature indicates the robustness of CIGS solar cells for long‐term space explorations. On the other hand, electron irradiation with fluence above 1 × 1016 cm−2 suppresses the solar cell performance of both CsF‐free and CsF‐treated samples, which is expected to be due to the formation of irradiation‐induced defects on the CIGS thin film. This result suggests that the formation of irradiation‐induced defects is independent of the incorporation of heavier alkali metals into the CIGS thin films. The defect passivation and/or introduction rates at different fluences are investigated.

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“…8,9 Reports on the effects of high energy electron irradiation on PL spectra of Cu(In,Ga)Se 2 can be found in the literature. [10][11][12] However, such reports provide limited information on the physical nature of the defects generated by radiation or on the mechanisms of the extraordinary radiation hardness of CuInSe 2 . The main reason for this is the high level of doping of the materials used for such studies, which were thin polycrystalline films with [Cu]/[InþGa] ratios smaller that unity.…”

Section: Introductionmentioning

confidence: 99%

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

Yakushev

Mudryi

Borodavchenko

et al. 2015

Journal of Applied Physics

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This version is available at https://strathprints.strath.ac.uk/54688/ Strathprints is designed to allow users to access the research output of the University of Strathclyde. Unless otherwise explicitly stated on the manuscript, Copyright © and Moral Rights for the papers on this site are retained by the individual authors and/or other copyright owners. Please check the manuscript for details of any other licences that may have been applied. You may not engage in further distribution of the material for any profitmaking activities or any commercial gain. You may freely distribute both the url (https://strathprints.strath.ac.uk/) and the content of this paper for research or private study, educational, or not-for-profit purposes without prior permission or charge.Any correspondence concerning this service should be sent to the High-quality single crystals of CuInSe 2 with near-stoichiometric elemental compositions were irradiated with 6 MeV electrons, at doses from 10 15 to 3 Â 10 18 cm À2 , and studied using photoluminescence (PL) at temperatures from 4.2 to 300 K. Before irradiation, the photoluminescence spectra reveal a number of sharp and well resolved lines associated with free-and bound-excitons. The spectra also show broader bands relating to free-to-bound transitions and their phonon replicas in the lower energy region below 1.0 eV. The irradiation with 6 MeV electrons reduces the intensity of the free-and the majority of the bound-exciton peaks. Such a reduction can be seen for doses above 10 16 cm À2 . The irradiation induces new PL lines at 1.0215 eV and 0.9909 eV and also enhances the intensity of the lines at 1.0325 and 1.0102 eV present in the photoluminescence spectra before the irradiation. Two broad bands at 0.902 and 0.972 eV, respectively, are tentatively associated with two acceptor-type defects: namely, interstitial selenium (Se i ) and copper on indium site (Cu In ). After irradiation, these become more intense suggesting an increase in the concentration of these defects due to irradiation. V C 2015 AIP Publishing LLC.[http://dx

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Optical and electrical properties of electron-irradiated Cu(In,Ga)Se2 solar cells

Cited by 10 publications

References 17 publications

Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se₂ Solar Cells

Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se₂ Solar Cells

The Effect of Electron Irradiation on Cesium Fluoride‐Free and Cesium Fluoride‐Treated Cu(In_1−x,Ga_x)Se₂ Solar Cells

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

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Optical and electrical properties of electron-irradiated Cu(In,Ga)Se2 solar cells

Cited by 10 publications

References 17 publications

Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells

Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se2 Solar Cells

The Effect of Electron Irradiation on Cesium Fluoride‐Free and Cesium Fluoride‐Treated Cu(In1−x,Gax)Se2 Solar Cells

A photoluminescence study of excitonic grade CuInSe2 single crystals irradiated with 6 MeV electrons

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Product

Resources

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Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se₂ Solar Cells

Effects of Proton Irradiation on Optical and Electrical Properties of Cu(In,Ga)Se₂ Solar Cells

The Effect of Electron Irradiation on Cesium Fluoride‐Free and Cesium Fluoride‐Treated Cu(In_1−x,Ga_x)Se₂ Solar Cells