Optical and Electrical Properties of Nanocrystalline SnO&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; Thin Films Synthesized by Chemical Bath Deposition Method

Sagadevan, Suresh; Podder, Jiban

doi:10.4236/snl.2015.54007

Cited by 43 publications

(22 citation statements)

References 17 publications

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“…The film shows a preferred orientation along the (110) plane. The (100), (101), (200), (211), (220) and (310) peaks coincide well with standard data (JCPDS Card No.88-0287) (18). The crystallite size of film was calculated by Debye-Scherrerś formula given by (4): D=0.9 λ/βcosθ…”

Section: Resultssupporting

confidence: 75%

Comparative NO2 Sensing Characteristics of SnO2:WO3 Thin Film Against Bulk and Investigation of Optical Properties of the Thin Film

Journal¹

2018

Baghdad Sci.J

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A comparative investigation of gas sensing properties of SnO2 doped with WO3 based on thin film and bulk forms was achieved. Thin films were deposited by thermal evaporation technique on glass substrates. Bulk sensors in the shape of pellets were prepared by pressing SnO2:WO3 powder. The polycrystalline nature of the obtained films with tetragonal structure was confirmed by X-ray diffraction. The calculated crystalline size was 52.43 nm. Thickness of the prepared films was found 134 nm. The optical characteristics of the thin films were studied by using UV-VIS Spectrophotometer in the wavelength range 200 nm to 1100 nm, the energy band gap, extinction coefficient and refractive index of the thin film were 2.5 eV , 0.024 and 2.51, respectively. Hall measurements confirmed that the films are n-type. The NO2 sensing characteristics of the SnO2:WO3 sensors were studied with various temperatures and NO2 gas concentrations. Both thin film and bulk sensors showed maximum sensitivity at temperature of 250 oC. Thin film sensors showed enhanced response in comparison to that of pellets.

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Section: Resultssupporting

confidence: 75%

Comparative NO2 Sensing Characteristics of SnO2:WO3 Thin Film Against Bulk and Investigation of Optical Properties of the Thin Film

Journal¹

2018

Baghdad Sci.J

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“…If, instead, this level can be attributed to V O , which becomes more dominant once the hydrogen donors are removed, then our calculated value is also in good agreement with this result. We note that a level at 0.28-0.35 eV has been observed in many n-type samples [75,[164][165][166] (as has the ∼0.15 eV level) [73][74][75]167], and that, in a study on SnO 2 nanoparticles [168], a switching of activation energy from 0.11 to 0.35 eV was observed in the largest nanoparticle when changing from low to high temperature.…”

Section: Sn Omentioning

confidence: 52%

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Buckeridge

Catlow

Farrow

et al. 2018

Phys. Rev. Materials

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The source of n-type conductivity in undoped transparent conducting oxides has been a topic of debate for several decades. The point defect of most interest in this respect is the oxygen vacancy, but there are many conflicting reports on the shallow versus deep nature of its related electronic states. Here, using a hybrid quantum mechanical/molecular mechanical embedded cluster approach, we have computed formation and ionization energies of oxygen vacancies in three representative transparent conducting oxides: In 2 O 3 , SnO 2 , and ZnO. We find that, in all three systems, oxygen vacancies form well-localized, compact donors. We demonstrate, however, that such compactness does not preclude the possibility of these states being shallow in nature, by considering the energetic balance between the vacancy binding electrons that are in localized orbitals or in effective-mass-like diffuse orbitals. Our results show that, thermodynamically, oxygen vacancies in bulk In 2 O 3 introduce states above the conduction band minimum that contribute significantly to the observed conductivity properties of undoped samples. For ZnO and SnO 2 , the states are deep, and our calculated ionization energies agree well with thermochemical and optical experiments. Our computed equilibrium defect and carrier concentrations, however, demonstrate that these deep states may nevertheless lead to significant intrinsic n-type conductivity under reducing conditions at elevated temperatures. Our study indicates the importance of oxygen vacancies in relation to intrinsic carrier concentrations not only in In 2 O 3 , but also in SnO 2 and ZnO.

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“…30 Our approach is an aqueous spray method, which has been shown to give perfectly conformal coatings with plasma frequencies up to the near infrared. 6 The perfect conformity is important because many plasmonic applications require structured devices, such as slot waveguides, 31,32 transmission gratings, 33 and lamellar gratings.…”

Section: Introductionmentioning

confidence: 99%

Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics

et al. 2017

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Abstract. Electrodynamic properties of fluorine-doped tin oxide films grown by aqueous-spray-based heterogeneous reaction on heated hydrophilic substrates were investigated with emphasis on applications to infrared plasmonics. These properties were correlated with physical ones such as crystallinity, dopant and electron concentrations, conductivity, and mobility. The degree of crystallinity for the nanocrystalline films increases with F concentration and growth temperature. The F concentration in the films is proportional to that in the starting solution. Electron concentration and Hall mobility rise more slowly with F concentration. At their highest, both F and electron concentrations are ∼2% of the Sn concentration. In more lightly doped films, the electron concentration significantly exceeds the F concentration. The achieved resistivity of the doped films is lower than for undoped SnO 2 film by 20 to 750 times. The infrared complex permittivity spectrum shows a shift in plasma wavelength from 15 to 2 μm with more than two orders increase in F concentration. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Optical and Electrical Properties of Nanocrystalline SnO<sub>2</sub> Thin Films Synthesized by Chemical Bath Deposition Method

Cited by 43 publications

References 17 publications

Comparative NO2 Sensing Characteristics of SnO2:WO3 Thin Film Against Bulk and Investigation of Optical Properties of the Thin Film

Comparative NO2 Sensing Characteristics of SnO2:WO3 Thin Film Against Bulk and Investigation of Optical Properties of the Thin Film

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics

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Optical and Electrical Properties of Nanocrystalline SnO&lt;sub&gt;2&lt;/sub&gt; Thin Films Synthesized by Chemical Bath Deposition Method

Cited by 43 publications

References 17 publications

Comparative NO2 Sensing Characteristics of SnO2:WO3 Thin Film Against Bulk and Investigation of Optical Properties of the Thin Film

Comparative NO2 Sensing Characteristics of SnO2:WO3 Thin Film Against Bulk and Investigation of Optical Properties of the Thin Film

Deep vs shallow nature of oxygen vacancies and consequentn-type carrier concentrations in transparent conducting oxides

Electrodynamic properties of aqueous spray-deposited SnO2:F films for infrared plasmonics

Contact Info

Product

Resources

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Optical and Electrical Properties of Nanocrystalline SnO<sub>2</sub> Thin Films Synthesized by Chemical Bath Deposition Method

Electrodynamic properties of aqueous spray-deposited SnO₂:F films for infrared plasmonics