Optical and electrical properties of zinc oxide films prepared by spray pyrolysis

Joseph, Benny; Gopchandran, K.G.; Manoj, P K; Koshy, Peter; Vaidyan, V. K.

doi:10.1007/bf02745554

Cited by 89 publications

(37 citation statements)

References 14 publications

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“…This is associated with increased evaporation of water, the effect on surface roughness and defects as reported by Regragui et al (2001). Absorption coefficient (a) was determined at the region of strong absorption from the transmittance data, as follows (Joseph et al 1999).…”

Section: Compositional Analysismentioning

confidence: 99%

“…The optical band gap of the annealed films for different time duration was calculated using the transmission spectra. The relation between the optical band gap (E g ) and absorption coefficient (a) is given by (Joseph et al 1999).…”

Section: Compositional Analysismentioning

confidence: 99%

“…It was observed that the as-grown films have low conductivity, which may be due to grain boundary effects and also, due to adsorption of air was used as carrier gas. There is a possibility of chemisorptions of large number of oxygen molecules on the surface and grain boundaries of the film, which will create the potential barrier that affects the electrical transport causing a reduction in conductivity (Joseph et al 1999).…”

Section: Electrical Characterizationmentioning

confidence: 99%

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Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

2013

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Zinc oxide nanofiber thin films have been deposited on glass substrate by spray pyrolysis technique. The X-ray diffraction studies revealed that the films are polycrystalline with the hexagonal structure and a preferred orientation along (002) direction for films annealed for 1 h at 450°C. Further increase in annealing time changes the preferred orientation to (100) direction. The scanning electron microscopic analysis showed the formation of ZnO nanofiber with an average diameter of approximately 800 nm for annealed films. The compositional analysis of nanofiber ZnO thin films were studied by time of flight secondary ion mass spectroscopy, which indicated oxygen deficiency in the films. The optical properties of annealed films have shown a variation in the band gap between 3.29 and 3.20 eV. The electrical conductivity of the as grown and annealed films showed an increase in the conductivity by two orders of magnitude with increase in annealing duration.

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Section: Compositional Analysismentioning

confidence: 99%

Section: Compositional Analysismentioning

confidence: 99%

Section: Electrical Characterizationmentioning

confidence: 99%

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Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

2013

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“…It is a good candidate for transparent conducting oxides (TCO) and, therefore, can substitute for indium tin oxide (In 2 O 3 :Sn) and tin oxide (SnO 2 ) in conductive electrodes of other semiconductor solar cells. Due to its high stability in hydrogen plasma, its nontoxicity, its controllable resistivity, and the low cost of the constituent elements, ZnO has become very attractive for photovoltaic applications [3]. ZnO is widely used in piezoelectric transducers, varistors, gas sensors, and luminescent phosphors [4].…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of (n)ZnO/(p)CdTe Heterojunction and Its Performance as a Photovoltaic Converter

2006

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Thin film heterojuctions of the type (n)ZnO/(p)CdTe with different doping concentration were prepared by vacuum evaporation, and their electrical and optical properties, both in dark and under illumination at room temperature as well as elevated temperatures, were studied. Different junction parameters such as ideality factors, barrier heights, Richardson constant, short-circuit current, etc. were determined from I -V characteristics. These parameters were found to change significantly on hydrogenation and annealing of the junctions and also on variation of temperature. The structures showed the change of the photovoltaic (PV) effect, giving a fill factor of 0.57 for hydrogen (H)-treated with an open-circuit voltage of 345 mV and a short-circuit current density of 75.72 × 10 −4 mA·cm −2 and 0.42 for untreated with an open-circuit voltage of 244 mV and a short-circuit current density of 52.00 × 10 −4 mA·cm −2 for doping concentrations of N a = 2.43 × 10 16 /cm 3 (2.53% Sb doped CdTe) and N d = 3.88 × 10 15 /cm 3 (2.74% Al doped ZnO). The junctions were found to possess a series resistance as high as 437 for an untreated sample and 95 for H-treated samples even under illumination. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve an ideal solar cell.

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“…It is found as a good candidate for transparent conducting oxides (TCO) and, therefore, can substitute for indium tin oxide (In 2 O 3 :Sn) and tin oxide (SnO 2 ) in conductive electrodes of other semiconductor solar cells. Due to its high stability in hydrogen plasma, nontoxicity, controllable resistivity, and low cost of the constituent elements, ZnO has become very attractive for photovoltaic applications [2]. The formation mechanism of Zn 2 SiO 4 and amorphous SiO 2 over a deep range from the surface to the interface of the ZnO/Si system was carried out [3].…”

mentioning

confidence: 99%

Thermal and Doping Effect on Sn/(n)ZnO Schottky Junction and Its Performance as a PV Effect

Wary

Rahman

2009

Int J Thermophys

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Thin film Sn/(n)ZnO Schottky junctions with different doping concentrations were prepared by vacuum evaporation. Different junction parameters such as ideality factor, barrier height, Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. These parameters were found to change significantly with variations of doping concentration and temperature. The structures showed the change of the PV effect, giving a fill factor of 0.42 (efficiency of 0.39 %) with an open-circuit voltage of 124 mV and a short-circuit current density of 113×10 −5 A · cm −2 for a doping concentration, N d = 3.88 × 10 15 cm −3 (2.74 % Al-doped ZnO). However, by increasing the doping concentration, the efficiency was found to increase by up to 4.54 % for doping concentration, N d = 2.28 × 10 17 cm −3 . The conversion efficiencies varied with temperature and were observed to have an overall improvement up to 343 K. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve an ideal and high efficiency PV converter.

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Optical and electrical properties of zinc oxide films prepared by spray pyrolysis

Cited by 89 publications

References 14 publications

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

Effect of annealing on the properties of zinc oxide nanofiber thin films grown by spray pyrolysis technique

Electrical and Optical Properties of (n)ZnO/(p)CdTe Heterojunction and Its Performance as a Photovoltaic Converter

Thermal and Doping Effect on Sn/(n)ZnO Schottky Junction and Its Performance as a PV Effect

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