Thin europium lms (2050 nm thick) on a glass substrate were transformed into EuHx (0 < x < 2) by interaction with H2 introduced into the reactor in successive calibrated doses. By measuring the pressure, the hydrogen uptake (H/Eu) was determined at every step of the reaction. In situ monitoring of bulk properties (electrical resistance R(H/Eu), relative transparency to light T (H/Eu)/T0 and (H/Eu) dependent light transparency spectrum) conrms metalsemiconductor transition at room temperature. Both the electrical resistance and optical transparency of the lm strongly increase with hydrogen concentration as a consequence of the resulting increase of the content of semiconducting dihydride. Moreover, the course of work function changes ∆Φ(H/Eu) indicates inversion of the charge-transfer direction on the surface. The transition at room temperature from positively to negatively polarized hydrogen adsorbate was observed in situ during hydrogen uptake. As a result, the work function at equilibrium state varies with hydrogen content from +18 to −18 mV with respect to pure metal lm, reecting the change of mirror potential generated on the surface due to the accumulation of hydrogen adsorbates in the subsurface region.